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 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2010-04-22
Kanagawa Shonan Institute of Tech. Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array
Daisuke Suzuki, Masanori Natsui, Shoji Ikeda (Tohoku Univ.), Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa (ARL, Hitachi, Ltd.), Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2010-9
This paper presents a nonvolatile LUT (Lookup-Table) circuit in FPGA (Field-Programmable Gate Array) using a MTJ (Magnet... [more] ICD2010-9
ICD 2010-04-22
Kanagawa Shonan Institute of Tech. A 32-Mb SPRAM with localized bi-directional write driver, '1'/'0' dual-array equalized reference scheme, and 2T1R memory cell layout
Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi (Hitachi), Shoji Ikeda (Tohoku Univ.), Haruhiro Hasegawa, Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2010-10
A 32-Mb SPin-transfer torque RAM (SPRAM) chip was demonstrated with an access time of 32 ns and a cell write-time of 40 ... [more] ICD2010-10
ITE-MMS, MRIS 2009-10-08
Fukuoka FUKUOKA traffic center [Invited Talk] Nonvolatile RAM using spin transfer torque magnetization reversal (SPRAM)
Hiromasa Takahashi, Kenchi Ito, Jun Hayakawa, Katsuya Miura, Hiroyuki Yamamoto, Michihiko Yamanouchi (ARL, Hitachi, Ltd.), Kazuo Ono, Riichiro Takemura, Takayuki Kawahara (CRL, Hitachi, Ltd.), Ryutaro Sasaki (RIEC Tohoku Univ.), Haruhiro Hasegawa (RIEC Tohoku Univ., ARL, Hitachi, Ltd.), Shoji Ikeda (RIEC Tohoku Univ.), Hideyuki Matsuoka (ARL, Hitachi, Ltd.), Hideo Ohno (RIEC Tohoku Univ.)
The SPRAM (Spin Transfer Torque MRAM) is one of nonvolatile memories that “writing” is done by that a magnetization in M... [more]
SDM, ED 2009-06-24
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) ED2009-51 SDM2009-46
Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universa... [more] ED2009-51 SDM2009-46
SDM, ED 2009-06-24
Overseas Haeundae Grand Hotel, Busan, Korea Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] ED2009-52 SDM2009-47
SDM, ED 2009-06-24
Overseas Haeundae Grand Hotel, Busan, Korea Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] ED2009-53 SDM2009-48
ICD, SDM 2007-08-24
Hokkaido Kitami Institute of Technology SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion
Katsuya Miura, Takayuki Kawahara, Riichiro Takemura (Hitachi, Ltd.), Jun Hayakawa (Hitachi, Ltd./Tohoku Univ.), Michihiko Yamanouchi (Hitachi, Ltd.), Shoji Ikeda, Ryutaro Sasaki (Tohoku Univ.), Kenchi Ito, Hiromasa Takahashi, Hideyuki Matsuoka (Hitachi, Ltd.), Hideo Ohno (Tohoku Univ.) SDM2007-166 ICD2007-94
SPin-transfer torque RAM (SPRAM) with MgO-barrier-based magnetic tunnel junctions (MTJs) is a promising candidate for a ... [more] SDM2007-166 ICD2007-94
ICD 2007-04-12
Oita   [Invited Talk] 2-Mb SPRAM (SPin-transfer torque RAM) with Bit-by-bit Bi-Directional Current Write and Parallelizing-Direction Current Read
Riichiro Takemura, Takayuki Kawahara, Katsuya Miura (Hitachi), Jun Hayakawa (Hitachi/Tohoku Univ.), Shoji Ikeda, Young Min LEE, Ryutaro Sasaki (Tohoku Univ.), Yasushi Goto, Kenchi Ito (Hitachi), Toshiyasu Meguro, Fumihiro Matsukura (Tohoku Univ.), Hiromasa Takahashi (Hitachi/Tohoku Univ.), Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2007-6
A 1.8-V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2 µm logic process with MgO tunneling barrier cell demo... [more] ICD2007-6
 Results 1 - 8 of 8  /   
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