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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-12 11:30 |
Online | Online | [Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu)  SDM2021-62 |
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] | SDM2021-62 pp.47-52 |
| MW, ED | 2021-01-29 14:25 |
Online | Online | Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] | ED2020-34 MW2020-87 pp.34-37 |
| CPM, LQE, ED | 2016-12-12 13:00 |
Kyoto | Kyoto University | Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73 |
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] | ED2016-57 CPM2016-90 LQE2016-73 pp.1-4 |
| ED | 2008-06-13 13:50 |
Ishikawa | Kanazawa University | Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.) ED2008-24 |
[more] | ED2008-24 pp.11-16 |
| SDM, R, ED | 2007-11-16 14:15 |
Osaka | High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217 |
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] | R2007-49 ED2007-182 SDM2007-217 pp.19-22 |
|
| CPM, ED, LQE | 2007-10-11 17:35 |
Fukui | Fukui Univ. | UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65 |
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] | ED2007-164 CPM2007-90 LQE2007-65 pp.43-46 |
| CPM, ED, LQE | 2007-10-12 11:15 |
Fukui | Fukui Univ. | Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71 |
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] | ED2007-170 CPM2007-96 LQE2007-71 pp.73-76 |
| MW, ED | 2007-01-19 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) |
Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] | ED2006-232 MW2006-185 pp.179-182 |
| ED, CPM, LQE | 2006-10-05 15:20 |
Kyoto | Interface control for GaN-based electron devices Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University) |
[more] | ED2006-157 CPM2006-94 LQE2006-61 pp.29-34 |
|
| ED, CPM, SDM | 2006-05-19 13:10 |
Aichi | VBL, Toyohashi University of Technology | Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.) |
[more] | ED2006-36 CPM2006-23 SDM2006-36 pp.91-94 |
| ED, MW | 2006-01-19 10:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ) |
[more] | ED2005-200 MW2005-154 pp.7-12 |
| R, ED, SDM | 2005-11-25 15:55 |
Osaka | Central Electric Club | Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were in... [more] | R2005-46 ED2005-181 SDM2005-200 pp.47-52 |
| LQE, ED, CPM | 2005-10-13 15:40 |
Shiga | Ritsumeikan Univ. | Lateral tunneling transport in submicron gates on AlGaN/GaN HFET Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] | ED2005-132 CPM2005-119 LQE2005-59 pp.67-70 |
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