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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2016-08-03
09:00
Osaka Central Electric Club [Invited Talk] SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation
Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST) SDM2016-60 ICD2016-28
 [more] SDM2016-60 ICD2016-28
pp.83-87
SDM 2016-01-28
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Understanding of BTI for Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122
(To be available after the conference date) [more] SDM2015-122
pp.9-12
SDM 2015-01-27
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] SDM2014-143
pp.33-36
SDM 2015-01-27
16:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology
Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shinichi O'uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-145
 [more] SDM2014-145
pp.41-44
SDM 2014-01-29
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs
Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] SDM2013-138
pp.13-16
ICD, ITE-IST 2013-07-05
16:50
Hokkaido San Refre Hakodate A Study on 1/f Noise Characteristic in Independent-Double-Gate-FinFET
Hideo Sakai (Keio Univ.), Shin-ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Meishoku Masahara (AIST), Hiroki Ishikuro (Keio Univ.) ICD2013-43
In this work, we measured 1/f noise of Independent-Double-Gate- (IDG-) FinFET which has two independent gates. Flicker n... [more] ICD2013-43
pp.119-124
ICD 2011-04-19
10:55
Hyogo Kobe University Takigawa Memorial Hall 0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates
Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) ICD2011-11
This article presents a FinFET SRAM which salvages malfunctioned bits caused by random variation. In the presenting SRAM... [more] ICD2011-11
pp.59-63
SDM, ED 2011-02-23
16:30
Hokkaido Hokkaido Univ. A Study on Precise FinFET High Frequency Characteristic Evaluation Method
Hideo Sakai (Keio Univ.), Shinichi Ouchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST), Hiroki Ishikuro (Keio Univ.) ED2010-198 SDM2010-233
In recent years, different research groups have been focusing on FinFET transistor research as an excellent replacement ... [more] ED2010-198 SDM2010-233
pp.37-42
ICD, SDM 2010-08-27
16:25
Hokkaido Sapporo Center for Gender Equality On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs
Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66
The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] SDM2010-151 ICD2010-66
pp.149-154
 Results 1 - 9 of 9  /   
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