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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ITE-IDY, EID, SID-JC [detail] | 2023-08-04 13:05 |
Online | Online (Zoom) | [Invited Talk]
Towards Small, Ultrahigh-Definition Micro-LED Displays Using Monolithic Vertically Stacked RGB LEDs Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi (Osaka Univ.) |
[more] | |
| ITE-IDY, EID, SID-JC [detail] | 2020-10-16 13:30 |
Online | Online | [Invited Lecture]
High brightness and RGB integration of Eu-doped GaN-based red LEDs for ultrahigh-resolution micro-LED display Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi (Osaka Univ.) |
[more] | |
| LQE, OPE, SIPH | 2018-12-06 10:45 |
Tokyo | Keio University | [Encouragement Talk]
Circularly polarized light emission by semiconductor-based three-dimensional chiral photonic crystals Shun Takahashi (KIT), Yasutomo Ota, Takeyoshi Tajiri, Jun Tatebayashi, Satoshi Iwamoto, Yasuhiko Arakawa (Univ. of Tokyo)  OPE2018-98 LQE2018-108 SIPH2018-14 |
Semiconductor-based three-dimensional chiral photonic crystals having a helical periodicity of telecom wavelength scale ... [more] | OPE2018-98 LQE2018-108 SIPH2018-14 pp.7-10 |
| EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] | 2018-01-25 09:30 |
Hyogo | Control of circularly polarized light emission by semiconductor-based three-dimensional chiral photonic crystals Shun Takahashi (KIT), Yasutomo Ota, Takeyoshi Tajiri, Jun Tatebayashi, Satoshi Iwamoto, Yasuhiko Arakawa (Univ. of Tokyo) PN2017-38 EMT2017-75 OPE2017-116 LQE2017-98 EST2017-74 MWP2017-51 |
[more] | PN2017-38 EMT2017-75 OPE2017-116 LQE2017-98 EST2017-74 MWP2017-51 pp.1-4 |
|
| LQE, CPM, ED | 2017-12-01 10:05 |
Aichi | Nagoya Inst. tech. | Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer Jun Tatebayashi, Tomohiro Inaba, Keishi Shiomi, Yasuhumi Fujiwara (Osaka Univ.) ED2017-58 CPM2017-101 LQE2017-71 |
It has been an important issue to increase the light output power of Eu-doped GaN (GaN: Eu) red LEDs for their practical... [more] | ED2017-58 CPM2017-101 LQE2017-71 pp.45-48 |
| LQE | 2004-12-03 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Room Temperature Lasing Characteristics in InAs Quantum-Dot Microdisk Toshihide Ide, Toshihiko Baba (Yokohama Nat'l Univ.), Jun Tatebayashi, Satoshi Iwamoto, Toshihiro Nakaoka, Yasuhiko Arakawa (Univ. of Tokyo) |
We fabricated InAs quantum-dot (QD) microdisk lasers (MDLs) with air-claddings. The room temperature (RT) lasing by fem... [more] |
LQE2004-120 pp.11-14 |
| LQE | 2004-12-03 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by MOCVD Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe (Univ. of Tokyo), Hisao Sudou, Akito Kuramata (Fujitsu Lab.), Mitsuru Sugawara, Yasuhiko Arakawa (Univ. of Tokyo) |
Quantum-dot lasers are recently of practical concern since quantum dots can extend the lasing wavelengths of GaAs-based ... [more] | LQE2004-126 pp.45-50 |
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