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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 24件中 1~20件目  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:20
Shizuoka Shizuoka Univ. (Hamamatsu) Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83
(To be available after the conference date) [more] ED2019-40 CPM2019-59 LQE2019-83
pp.33-35
MW, ED 2017-01-26
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Towards Realization of GaN Vertical Power Devices
Jun Suda (Kyoto Univ.) ED2016-99 MW2016-175
GaN vertical power devices have attracted much attention as next-generation high-voltage low-on-resistance power devices... [more] ED2016-99 MW2016-175
pp.17-18
CPM, LQE, ED 2016-12-12
13:50
Kyoto Kyoto University Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-59 CPM2016-92 LQE2016-75
 [more] ED2016-59 CPM2016-92 LQE2016-75
pp.9-14
CPM, LQE, ED 2016-12-12
14:40
Kyoto Kyoto University Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-61 CPM2016-94 LQE2016-77
Raman scattering spectroscopy and infrared reflectance spectroscopy were performed on GaN free-standing substrates with ... [more] ED2016-61 CPM2016-94 LQE2016-77
pp.21-26
SDM, EID 2016-12-12
14:45
Nara NAIST Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC
Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2016-22 SDM2016-103
In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes suppl... [more] EID2016-22 SDM2016-103
pp.59-62
ED, LQE, CPM 2015-11-26
13:10
Osaka Osaka City University Media Center Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements
Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] ED2015-72 CPM2015-107 LQE2015-104
pp.21-25
ED, LQE, CPM 2015-11-26
13:35
Osaka Osaka City University Media Center Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105
 [more] ED2015-73 CPM2015-108 LQE2015-105
pp.27-32
ED, LQE, CPM 2015-11-26
14:00
Osaka Osaka City University Media Center Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-74 CPM2015-109 LQE2015-106
 [more] ED2015-74 CPM2015-109 LQE2015-106
pp.33-37
SDM, EID 2014-12-12
10:00
Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
pp.1-6
SDM, EID 2014-12-12
10:15
Kyoto Kyoto University Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] EID2014-14 SDM2014-109
pp.7-11
SDM, EID 2014-12-12
16:45
Kyoto Kyoto University Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] EID2014-35 SDM2014-130
pp.115-118
SDM 2013-12-13
16:40
Nara NAIST Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] SDM2013-131
pp.91-96
SDM 2013-12-13
17:20
Nara NAIST Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] SDM2013-133
pp.101-105
SDM 2012-12-07
10:00
Kyoto Kyoto Univ. (Katsura) Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] SDM2012-115
pp.1-5
SDM 2011-12-16
11:00
Nara NAIST Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] SDM2011-135
pp.17-21
SDM 2011-12-16
16:20
Nara NAIST Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] SDM2011-146
pp.77-82
LQE, ED, CPM 2011-11-17
10:05
Kyoto Katsura Hall,Kyoto Univ. AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] ED2011-73 CPM2011-122 LQE2011-96
pp.1-4
LQE, ED, CPM 2011-11-17
14:50
Kyoto Katsura Hall,Kyoto Univ. Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-81 CPM2011-130 LQE2011-104
 [more] ED2011-81 CPM2011-130 LQE2011-104
pp.39-42
SDM 2010-12-17
10:00
Kyoto Kyoto Univ. (Katsura) Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] SDM2010-185
pp.1-6
SDM 2008-12-05
14:30
Kyoto Kyoto University, Katsura Campus, A1-001 Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) SDM2008-191
4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {11-20} face have bee... [more] SDM2008-191
pp.37-41
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