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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2008-11-27
17:15		 Aichi Nagoya Institute of Technology Toward high-power operation of 230nm-band AlGaN UV-LED
Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) ED2008-167 CPM2008-116 LQE2008-111		 210-350 nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive ... [more] ED2008-167 CPM2008-116 LQE2008-111
pp.71-76
LQE, ED, CPM 2008-11-27
17:40		 Aichi Nagoya Institute of Technology 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112		 250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractiv... [more] ED2008-168 CPM2008-117 LQE2008-112
pp.77-82
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