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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 6件中 1~6件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
OPE 2013-12-20
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. Metal mirror assisted grating couplers between multilayered waveguides toward 3D optical interconnects
JoonHyun Kang, Yuki Atsumi, Yusuke Hayashi, Junichi Suzuki, Yuki Kuno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech)
Silicon photonics for optical interconnects can further improve the signal transmission density by introducing multilaye... [more] OPE2013-142
pp.25-30
OPE 2013-12-20
16:55
Tokyo Kikai-Shinko-Kaikan Bldg. Permeability control on InP-based photonic integration platform using metamaterial
Tomohiro Amemiya, Toru Kanazawa (Tokyo Tech.), Atsushi Ishikawa (RIKEN), JoonHyun Kang, Nobuhiko Nishiyama, Yasuyuki Miyamoto (Tokyo Tech.), Takuo Tanaka (RIKEN), Shigehisa Arai (Tokyo Tech.)
 [more] OPE2013-146
pp.45-50
LQE 2013-12-13
11:15
Tokyo   Investigation of InP/Si Hybrid Multi-functional Optical Dvice Structure
Junichi Suzuki, Keita Fukuda, Yusuke Hayashi, JoonHyun Kang, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. of Tech.)
III-V/Si hybrid integration with direct bonding is an attractive way to realize one-chip optical router. In this paper, ... [more] LQE2013-129
pp.21-26
LQE 2012-12-13
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. III-V/Si Direct Bonding by N2 Plasma Surface Activation and Its Application to Hybrid Laser
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, JoonHyun Kang, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. Tech.)
III-V/Si hybrid integration with direct bonding is an attractive way to realize large scale photonic integrated circuits... [more] LQE2012-129
pp.35-40
OPE 2011-12-16
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication process of multi-layered amorphous silicon wire waveguides
JoonHyun Kang, Yuki Atsumi, Manabu Oda, Nobuhiko Nishiyama, Shigehisa Arai (Titech)
Silicon photonics is a promising candidate as an on-chip interconnection in LSIs. a-Si can be deposited under 300°C by P... [more] OPE2011-146
pp.27-32
LQE 2010-12-17
11:10
Tokyo Kikai-Shinko-Kaikan Bldg. Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating
Takahiko Shindo, Tadashi Okumura, Hitomi Ito, Takayuki Koguchi, Daisuke Takahashi, Yuki Atsumi, Joonhyun Kang, Ryo Osabe, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech)
The performance of LSI will hit performance ceiling by global wiring data capacity with technological progress like a si... [more] LQE2010-118
pp.17-22
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