IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ITS, IE, ITE-AIT, ITE-HI, ITE-ME [detail] 2013-02-18
11:00		 Hokkaido Hokkaido Univ. Evaluation of no disparity realistic image and stereoscopic image from the visual comfort
Nobutaka Natsui, Hisaki Nate, Kazuo Ishikawa (Tokyo Polytech. Univ.), Yutaka Ichihara, Nobuyuki Miyake, Yoshijiro Ushio (NIKON) 		 [more]
SDM 2012-06-21
13:35		 Aichi VBL, Nagoya Univ. Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method
Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52		 To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the pot... [more] SDM2012-52
pp.47-51
SDM, ED 2009-06-25
12:00		 Overseas Haeundae Grand Hotel, Busan, Korea Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81		  [more] ED2009-86 SDM2009-81
pp.157-160
SDM 2008-10-10
16:15		 Miyagi Tohoku Univ. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167		 Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] SDM2008-167
pp.69-74
 Results 1 - 4 of 4  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan