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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 14:00 |
Tokyo | (Primary: On-site, Secondary: Online) |
Examination of high high-precision device modeling methods
-- Comparison of Neural Networks and Linear Regression -- Kengo Nakata, Takayuki Mori, Jiro Ida (Kanazawa Inst. Tech.)  SDM2023-71 |
Neural network (NN) models have the advantage of high inference speed, but they are difficult to modeling. For this reas... [more] | SDM2023-71 pp.36-40 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:35 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21 |
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] | SDM2023-42 ICD2023-21 pp.32-35 |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 13:30 |
Online | [Invited Talk]
Research Status of Steep Slope "PN-Body Tied SOI-FET" for Ultra low Power LSI Applications Jiro Ida, Takayuki Mori (Kanazawa IT) SDM2022-37 ICD2022-5 |
[more] | SDM2022-37 ICD2022-5 pp.13-16 |
|
| ICD, SDM, ITE-IST [detail] | 2022-08-08 14:15 |
Online | Evaluation of Steep Subthreshold Slope Device "Dual-gate type PN-body Tied SOI-FET" for Ultra-low Voltage Operation Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2022-38 ICD2022-6 |
In this study, we report the first prototype results of a Steep SS "Dual-Gate (DG) PN-Body Tied (PNBT) SOI-FET" for extr... [more] | SDM2022-38 ICD2022-6 pp.17-20 |
|
| ICD, SDM, ITE-IST [detail] | 2020-08-07 11:00 |
Online | Online | CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2020-8 ICD2020-8 |
In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our l... [more] | SDM2020-8 ICD2020-8 pp.37-40 |
| MW (2nd) |
2020-05-13 - 2020-05-15 |
Overseas | CU, Bangkok, Thailand (Postponed) |
RF Measurement of Steep Subthreshold Slope "PN-Body Tied SOI FET" Mitsuhiro Yuizono, Jiro Ida, Takayuki Mori (Kanazawa Inst of Tech) |
RF measured data of super steep subthreshold slope "PN-Body Tied (PNBT) SOI-FET" was obtained for the first time. The te... [more] | |
| MW (2nd) |
2020-05-13 - 2020-05-15 |
Overseas | CU, Bangkok, Thailand (Postponed) |
Analysis and Fabrication of Rectenna with SOI-MOSFET Diode and High Impedance Antenna for RF Energy Harvesting Keisuke Kawano, Yasunori Tsuchiya, Jiro Ida, Takayuki Mori (Kanazawa Inst of Tech) |
We analyzed and fabricated the rectenna with combination of the SOI-MOSFET diode and the high impedance antenna for the ... [more] | |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 14:10 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET” Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2019-51 ICD2019-16 |
In this study, We report the effect of the substrate bias (Vsub) and the positive charge (Qox) in the buried oxide (BOX)... [more] | SDM2019-51 ICD2019-16 pp.89-93 |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 14:35 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET" Takuya Yamada, Jiro Ida, Takayuki Mori, Nobuhiko Yasumaru, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) SDM2019-52 ICD2019-17 |
In this report，we have simulated the rectification efficiency of the rectenna using PNBT Diode that is a diode-connected... [more] | SDM2019-52 ICD2019-17 pp.95-98 |
| MW (2nd) |
2019-06-26 - 2019-06-28 |
Overseas | RUS, Bangkok, Thailand | Fabrication of Rectenna with 10 kOhm Antenna and SOI-MOSFET Diode for RF Energy Harvesting Ryota Yanagi, Yasunori Tsuchiya, Jiro Ida, Takayuki Mori, Takuya Yamada, Keisuke Noguchi, Kenji Itoh (KIT) |
We fabricated a rectenna which has the 10 kOhm high impedance folded dipole antenna and the SOI-MOSFET diode, in order t... [more] | |
| WPT, MW | 2019-04-22 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Sensitivity 2.4GHz Band Rectenna with Direct Matching Topology Shunya Tsuchimoto, Kenji Itoh, Keisuke Noguchi, Jiro Ida (Kanazawa Institute of Tech) WPT2019-7 MW2019-7 |
[more] | WPT2019-7 MW2019-7 pp.33-37 |
| WPT, MW | 2019-04-22 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1MHz band rectenna in nW opezation Nobuhiko Yasumaru, Kanto Nakanishi, Kenji Itoh, Shunya Tsuchimoto, Takuya Yamada, Takayuki Mori, Jiro Ida (Knazawa Inst.Tech.) WPT2019-8 MW2019-8 |
In this paper, simulational and experimental investigations on the 1 MHz band rectenna in nW operation are described for... [more] | WPT2019-8 MW2019-8 pp.39-43 |
| SDM | 2018-11-09 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76 |
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] | SDM2018-76 pp.59-64 |
| SDM, ICD, ITE-IST [detail] | 2018-08-07 14:25 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 | Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET" Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18 |
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] | SDM2018-31 ICD2018-18 pp.31-34 |
| MW (2nd) |
2018-06-27 - 2018-06-29 |
Overseas | KMITL, Bangkok, Thailand | High Efficiency Rectenna Design with High Impedance Antenna and SOI-MOSFET Connected Diode for RF Energy Harvesting Yasunori Tsuchiya, Jiro Ida, Takayuki Mori, Takuya Yamada, Shun Momose, Keisuke Noguchi, Kenji Itoh (KIT) |
The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET co... [more] | |
| MW (2nd) |
2018-06-27 - 2018-06-29 |
Overseas | KMITL, Bangkok, Thailand | Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting Takuya Yamada, Jiro Ida, Takayuki Mori, Shun Momose, Yasunori Tsuchiya, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) |
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the sup... [more] | |
| MW (2nd) |
2018-06-27 - 2018-06-29 |
Overseas | KMITL, Bangkok, Thailand | [Poster Presentation]
[Poster Presentation] The 500 MHz Band High-Sensitivity Rectenna with the High-Impedance Folded Dipole Antenna with slits Hiroki Kishimoto, Kenji Itoh, Keisuke Noguchi, Jiro Ida (Kanazawa Institute of Tech.) |
A high sensitive rectenna with the high-impedance folded dipole antenna (HFDA) with slits is described in this paper. To... [more] | |
| AP | 2018-05-17 09:35 |
Kumamoto | Kumamoto Univ. | A Folded Dipole Antenna with Three conductors for Energy Harvesting Applications Takuya Nishio, Keisuke Noguchi, Kenji Itoh, Jiro Ida (KIT) AP2018-13 |
We have studied a high impedance antenna in order to improve the rectification efficiency for energy harvesting applicat... [more] | AP2018-13 pp.1-6 |
| ICD, MW | 2018-03-02 14:15 |
Shiga | The University of Shiga Prefecture | The wideband rectenna with inductive folded dipole antenna Hiroki Kishimoto, Kenji Itoh, Keisuke Noguchi, Jiro Ida (KIT) MW2017-196 ICD2017-120 |
[more] | MW2017-196 ICD2017-120 pp.109-114 |
| SDM, ICD, ITE-IST [detail] | 2017-08-02 11:35 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33 |
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] | SDM2017-45 ICD2017-33 pp.109-114 |
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