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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 34件中 1~20件目  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2020-01-31
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications
Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT)
(To be available after the conference date) [more]
ED, THz [detail] 2019-12-23
16:45
Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
MWP 2019-11-27
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. Measurement of 4 x 4 planar slot array antenna near-field pattern
Akihiko Hirata (CIT), Yusuke Tanaka, Shintaro Hisatake (Gifu Univ.), Jiro Hirokawa (TITEC), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) MWP2019-43
 [more] MWP2019-43
pp.5-8
CQ
(2nd)
2019-09-05
10:40
Tokyo Inter-University Seminar House [Poster Presentation] Propagation environmental control using high speed pattern switching and blind algorithm
Sota Takahashi, Kentaro Nishimori, Issei Watanabe, Ryotaro Taniguchi (Niigata Univ.), Tomoki Murakami (NTT)
 [more]
CQ 2019-05-30
13:45
Hiroshima Hiroshima City University A proposal on propagation environmental control by virtual massive array
Issei Watanabe, Kentaro Nishimori, Ryotaro Taniguchi (Niigata Univ.), Tomoki Murakami (NTT) CQ2019-15
With the rapid spread of wireless communication devices such as smartphones in recent years, mobile communication traffi... [more] CQ2019-15
pp.23-26
ED, THz 2018-12-18
09:00
Miyagi RIEC, Tohoku Univ. [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] ED2018-62
pp.35-38
ED, MW 2018-01-25
15:45
Tokyo Kikai-Shinko-Kaikan Bldg. Delay Time Analysis of InAlN-MIS-HEMTs on Si Substrates
Tomohiro Yoshida (SEI), Isao Makabe (NICT), Isao Makabe (SEI), Issei Watanabe, Akifumi Kasamatsu (NICT), Ken Nakata, Kazutaka Inoue (SEI) ED2017-94 MW2017-163
 [more] ED2017-94 MW2017-163
pp.7-10
ED, THz 2017-12-18
17:10
Miyagi RIEC, Tohoku Univ Preliminary study on terahertz waveguide-based modulation using photoinduced carriers
Taito Shimanuki (Keio), Issei Watanabe, Akifumi Kasamatsu (NICT), Toshiyuki Tanaka, Yasuaki Monnai (Keio) ED2017-80
We study a method of modulating terahertz waves by changing a conductivity of a high-resistivity silicon crystal with ph... [more] ED2017-80
pp.29-32
ED, THz 2017-12-19
09:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
ED, THz 2017-12-19
09:40
Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
pp.37-40
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2016-12-20
13:15
Miyagi RIEC, Tohoku Univ [Invited Talk] Input Power Optimization of a Tripler-Base 300-GHz CMOS Up-Conversion Mixer
Ruibing Dong (NICT), Kosuke Katayama (Hiroshima Univ.), Shinsuke Hara (NICT), Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.) ED2016-93
A tripler-based 300-GHz-band up-conversion mixer in 40-nm CMOS is experimentally characterized, whose operating frequenc... [more] ED2016-93
pp.71-74
LQE, OPE, OCS 2016-10-28
14:25
Miyazaki Miyazaki Citizen's Plaza Integrated Semiconductor Optical-to-Terahertz Signal Converter -- Toward Seamless Connection between Optical and Terahertz Communication --
Satoshi Yamasaki, Akio Yasui, Tomohiro Amemiya (Titech), Kentaro Furusaswa, Shinsuke Hara, Issei Watanabe, Atsuchi Kanno, Norihiko Sekine (NICT), Zhichen Gu, Nobuhiko Nishiyama (Titech), Akifumi Kasamatsu (NICT), Shigehisa Arai (Titech) OCS2016-54 OPE2016-95 LQE2016-70
(Advance abstract in Japanese is available) [more] OCS2016-54 OPE2016-95 LQE2016-70
pp.109-114
ED 2015-12-21
13:05
Miyagi RIEC, Tohoku Univ [Invited Talk] Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth
Shinsuke Hara (NICT), Kousuke Katayama, Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.) ED2015-91
This paper presents a wideband differential amplifier operating at 138 GHz in 40-nm CMOS. It is composed of five differe... [more] ED2015-91
pp.1-6
ED 2015-12-21
13:45
Miyagi RIEC, Tohoku Univ Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] ED2015-92
pp.7-11
ED 2014-12-22
14:35
Miyagi   Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] ED2014-101
pp.15-19
ED 2014-12-22
15:00
Miyagi   Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] ED2014-102
pp.21-26
ED 2014-08-01
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 Analysis of effects of dislocation scattering on device characteristics of InSb HEMT
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the di... [more] ED2014-55
pp.13-18
ED 2013-12-16
13:55
Miyagi Research Institute of Electrical Communication Tohoku University Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] ED2013-92
pp.13-17
ED 2012-12-17
13:00
Miyagi Tohoku University DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] ED2012-93
pp.1-6
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