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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, CPM, ED | 2020-11-26 10:45 |
Online | Online | Calculation of carrier injection efficiency of AlGaN UVB Laser Diode Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)  ED2020-3 CPM2020-24 LQE2020-54 |
[more] | ED2020-3 CPM2020-24 LQE2020-54 pp.9-12 |
| LQE, CPM, ED | 2020-11-27 13:00 |
Online | Online | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.) ED2020-18 CPM2020-39 LQE2020-69 |
Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a... [more] | ED2020-18 CPM2020-39 LQE2020-69 pp.67-70 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| LQE, CPM, ED | 2020-11-27 13:40 |
Online | Online | Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] | ED2020-20 CPM2020-41 LQE2020-71 pp.75-78 |
| CPM, LQE, ED | 2019-11-21 15:50 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89 |
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] | ED2019-46 CPM2019-65 LQE2019-89 pp.57-60 |
| CPM, LQE, ED | 2019-11-22 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98 |
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] | ED2019-55 CPM2019-74 LQE2019-98 pp.93-96 |
| ED, LQE, CPM | 2018-11-30 12:40 |
Aichi | Nagoya Inst. tech. | GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 |
We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity... [more] | ED2018-47 CPM2018-81 LQE2018-101 pp.71-74 |
| LQE, CPM, ED | 2017-12-01 10:30 |
Aichi | Nagoya Inst. tech. | Two-step graded p-AlGaN structure for deep UV-LEDs Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2017-59 CPM2017-102 LQE2017-72 |
[more] | ED2017-59 CPM2017-102 LQE2017-72 pp.49-53 |
| LQE, CPM, ED | 2017-12-01 14:20 |
Aichi | Nagoya Inst. tech. | Two-step crystal growth of GaN nanowire by MOCVD Kohei Sasai, Myunghee KIM, Atusi Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki (Meijo Univ.) ED2017-65 CPM2017-108 LQE2017-78 |
[more] | ED2017-65 CPM2017-108 LQE2017-78 pp.77-82 |
| ED, LQE, CPM | 2015-11-26 11:20 |
Osaka | Osaka City University Media Center | AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102 |
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] | ED2015-70 CPM2015-105 LQE2015-102 pp.11-14 |
| CPM, ED, SDM | 2014-05-28 10:50 |
Aichi | Dislocation density dependence of strain relaxation in GaInN/GaN heterostructure Koji Ishihara, Yasunari Kondo, Hiroyuki Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2014-18 CPM2014-1 SDM2014-16 |
In this study, we investigated the critical thickness in GaInN/GaN heterostructure system as function of dislocation den... [more] | ED2014-18 CPM2014-1 SDM2014-16 pp.1-6 |
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| CPM, ED, SDM | 2014-05-28 11:10 |
Aichi | Investigations on Sb incoporations and surface morphologies of GaNSb Daisuke Komori, Hiroki Sasajima, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (meijo Univ.), Isamu Akasaki (meijo Univ./nagoya Univ.) ED2014-19 CPM2014-2 SDM2014-17 |
It is difficult to form high quality nitride-based heterostructures with widely different compositions since large diffe... [more] | ED2014-19 CPM2014-2 SDM2014-17 pp.7-10 |
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| CPM, ED, SDM | 2014-05-29 09:00 |
Aichi | Investigation of laser scribing in fabrication of nitride-based LEDs for improvement of light-absorptive Shun Hanai (Meijo Univ.), Atsushi Suzuki, Tsukasa Kitano (ELSEED), Daisuke Iida, Takahisa Kato, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2014-31 CPM2014-14 SDM2014-29 |
For reduction of a manufacturing cost of the light-emitting-diode (LED), it is necessary to reduce the distance of indiv... [more] | ED2014-31 CPM2014-14 SDM2014-29 pp.65-68 |
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| CPM, ED, SDM | 2014-05-29 09:40 |
Aichi | The effects of polarization charges to carrier transport in nitride-based LEDs Syouta Katsuno, Kento Hayashi, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2014-33 CPM2014-16 SDM2014-31 |
It has been reported that one of the reasons of carrier overflow is polarization charges induced at hetero interfaces. I... [more] | ED2014-33 CPM2014-16 SDM2014-31 pp.75-80 |
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| CPM, ED, SDM | 2014-05-29 10:00 |
Aichi | Application to flame sensor of nitride-based hetero-field-effect-transistor-type ultraviolet photo detectors Yuma Yamamoto, Takuya Murase, Mami Ishiguro, Tomoaki Yamada, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2014-34 CPM2014-17 SDM2014-32 |
In this study, we fabricated high-performance AlGaN/AlN heterostructure-field effect-transistor-type (HFET-type) UV phot... [more] | ED2014-34 CPM2014-17 SDM2014-32 pp.81-84 |
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| CPM, LQE, ED | 2013-11-28 11:25 |
Osaka | Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-66 CPM2013-125 LQE2013-101 |
We have aimed to improve the light extraction efficiency by using p- and n- high-reflectivity indium tin oxide /Al elect... [more] | ED2013-66 CPM2013-125 LQE2013-101 pp.11-16 |
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| CPM, LQE, ED | 2013-11-28 17:05 |
Osaka | Fabrication of the multi-junction GaInN based solar cells using tunnel junction Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-76 CPM2013-135 LQE2013-111 |
[more] | ED2013-76 CPM2013-135 LQE2013-111 pp.57-61 |
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| CPM, LQE, ED | 2013-11-29 14:20 |
Osaka | Development of AlGaN DUV-LEDs Masamichi Ippommatsu, Akira Hirano (UVCR), Hiroshi Amano (Nagoya Univ.), Isamu Akasaki (Meijyo Univ.) ED2013-84 CPM2013-143 LQE2013-119 |
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light -emitting diodes (DU... [more] | ED2013-84 CPM2013-143 LQE2013-119 pp.91-94 |
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| ED, LQE, CPM | 2012-11-30 10:20 |
Osaka | Osaka City University | Nitride semiconductor np-LEDs for improvement of efficiency droop Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.) ED2012-79 CPM2012-136 LQE2012-107 |
A decrease of external quantum efficiency with an increase of injection current in nitride semiconductor LEDs, a so-call... [more] | ED2012-79 CPM2012-136 LQE2012-107 pp.59-64 |
| ED, LQE, CPM | 2012-11-30 11:50 |
Osaka | Osaka City University | Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-82 CPM2012-139 LQE2012-110 |
Fabrication processes of a moth-eye patterned sapphire substrate (MPSS), which can enhance a light extraction efficiency... [more] | ED2012-82 CPM2012-139 LQE2012-110 pp.75-80 |
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