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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-01-27 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo)  SDM2014-136 |
[more] | SDM2014-136 pp.5-8 |
| SDM | 2014-11-07 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107 |
[more] | SDM2014-107 pp.65-70 |
| SDM | 2014-01-29 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] | SDM2013-136 pp.5-8 |
| US | 2012-08-28 15:40 |
Overseas | Pukyong National University | SVM based Classification for Underwater Transient Signals in Ocean Background Noise Juho Kim, Tae-Hoon Bok, Jinho Bae, Dong-Guk Paeng, Chong Hyun Lee (Jeju National Univ.), Seongil Kim (Agency for Defense Development) US2012-57 |
In this paper, new method for classification of underwater transient mechanical signals was proposed. The classifier use... [more] | US2012-57 pp.115-120 |
| SDM | 2010-06-22 14:35 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43 |
[more] | SDM2010-43 pp.55-60 |
| RCS, AN, MoNA, SR (Joint) |
2010-03-04 09:20 |
Kanagawa | YRP | Optimal Node Placement and Power Allocation in MIMO Two-Way Multihop Networks Rindranirina Ramamonjison, Jonghyun Lee, Kei Sakaguchi, Kiyomichi Araki (Tokyo Inst. of Tech.) RCS2009-285 |
Highly efficient multihop networks can be realized with MIMO two-way relaying techniques. Recently, power allocation and... [more] | RCS2009-285 pp.155-160 |
| SDM | 2009-06-19 13:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34 |
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] | SDM2009-34 pp.45-50 |
| RCS, AN, MoNA, SR (Joint) |
2009-03-04 10:35 |
Kanagawa | YRP | Power Allocation for Two-way MIMO relay network Jonghyun Lee, Gia Khanh Tran, Kei Sakaguchi, Kiyomichi Araki (Tokyo Inst. of Tech.) AN2008-68 |
MIMO two-way relay network is well known as a method for realization of high efficiency wireless relay network. In recen... [more] | AN2008-68 pp.23-27 |
| SDM | 2008-12-05 16:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195 |
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] | SDM2008-195 pp.59-64 |
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