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All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 9件中 1~9件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-11-08
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.)
 [more] SDM2019-77
pp.45-48
SDM, ICD, ITE-IST [detail] 2019-08-08
10:25
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Lecture] 3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.)
 [more] SDM2019-42 ICD2019-7
pp.31-34
SDM 2019-06-21
14:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI)
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] SDM2019-30
pp.23-27
SDM 2017-06-20
15:15
Tokyo Campus Innovation Center Tokyo Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.)
 [more] SDM2017-27
pp.31-34
SDM 2017-06-20
16:10
Tokyo Campus Innovation Center Tokyo Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)
 [more]
SDM 2016-06-29
13:30
Tokyo Campus Innovation Center Tokyo A resistive switching device based on breakdown and local anodic oxidation
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.)
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] SDM2016-38
pp.33-36
SDM 2016-06-29
16:40
Tokyo Campus Innovation Center Tokyo MoS2 film formation by RF magnetron sputtering for thin film transistors
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] SDM2016-46
pp.75-78
ICD 2014-01-28
13:00
Kyoto Kyoto Univ. Tokeidai Kinenkan [Invited Talk] Advanced CMOS Device Technologies as Multi-Functional LSI Platform
Hitoshi Wakabayashi (Tokyo Tech)
(To be available after the conference date) [more]
SDM, ED
(Workshop)
2012-06-27
09:30
Okinawa Okinawa Seinen-kaikan [Keynote Address] More-than-Moore Devices based on Advanced CMOS Technologies
Hitoshi Wakabayashi (Sony)
Based on the discussion on advanced CMOS device technologies using benchmark data, more-than-Moore devices are introduce... [more]
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