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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2007-08-24
14:50
Hokkaido Kitami Institute of Technology 0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node
Hiroyuki Onoda, Katsura Miyashita, Takeo Nakayama, Tomoko Kinoshita, Hisashi Nishimura, Atsushi Azuma, Seiji Yamada, Fumitomo Matsuoka (Toshiba) SDM2007-165 ICD2007-93
For the fist time, low supply voltage SRAM operation with stress-enhanced dopant segregated Schottky (DSS) source/drain ... [more] SDM2007-165 ICD2007-93
pp.131-134
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