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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2018-04-07
14:15		 Okinawa Okinawaken Seinen Kaikan Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device.
Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8		 Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] SDM2018-8 OME2018-8
pp.33-36
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
15:04		 Toyama Toyama Univ. Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film transistors -- Effects of substrate bias during the plasma treatment of IGZO. --
Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.) EID2015-31		  [more] EID2015-31
pp.41-44
CPM 2015-10-14
13:05		 Tokyo Kikai-Shinko-Kaikan Bldg. Structural, Electrical and Optical Properties of ZnO:Ga Films Grown by Reactive Plasma deposition with a DC Arc Discharge
Tomoaki Terasako (Ehime Univ.), Junichi Nomoto, Hisao Makino (Kochi Univ. Technol), Masakazu Yagi (Natl. Institute Technol., Kagawa Coll.), Sho Shirakata (Ehime Univ.), Tetsuya Yamamoto (Kochi Univ. Technol) CPM2015-76		  [more] CPM2015-76
pp.1-4
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