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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2014-08-05
13:55
Hokkaido Hokkaido Univ., Multimedia Education Bldg. Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process
Takeshi Okagaki, Takumi Hasegawa, Hiroyuki Takashino, Masako Fujii, Atsushi Tsuda, Koji Shibutani, Yoshinori Deguchi, Miho Yokota, Kazunori Onozawa (Renesas)
 [more] SDM2014-77 ICD2014-46
pp.83-86
SDM, VLD 2007-10-30
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.)
Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more]
VLD2007-57 SDM2007-201
pp.33-36
SDM, VLD 2007-10-30
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs
Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.)
We have developed a system consisting of a full-3D process simulator for stress calculation and k&#183;pband calculation... [more] VLD2007-59 SDM2007-203
pp.43-46
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