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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2011-04-19 10:20 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs Koichi Takeda, Toshio Saito, Shinobu Asayama, Yoshiharu Aimoto, Hiroyuki Kobatake, Shinya Ito, Toshifumi Takahashi, Kiyoshi Takeuchi, Masahiro Nomura, Yoshihiro Hayashi (Renesas Electronics) ICD2011-10 |
[more] |
ICD2011-10 pp.55-58 |
ICD |
2006-04-14 11:40 |
Oita |
Oita University |
Redefinition of Write Margin for Next-Generation SRAMs and Write-Margin Monitoring Circuits Koichi Takeda, Hidetoshi Ikeda, Yasuhiko Hagihara, Masahiro Nomura (NEC), Hiroyuki Kobatake (NECEL) |
[more] |
ICD2006-16 pp.85-90 |
ICD |
2005-04-14 09:00 |
Fukuoka |
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A Read-Static-Noise-Margin-Free SRAM cell for low-Vdd and High-speed applications Koichi Takeda, Yasuhiko Hagihara (NEC), Yoshiharu Aimoto (NECEL), Masahiro Nomura, Yoetsu Nakazawa (NEC), Toshio Ishii, Hiroyuki Kobatake (NECEL) |
A read-static-noise-margin-free SRAM cell consists of seven transistors, several of which are low-Vt NMOS transistors us... [more] |
ICD2005-1 pp.1-6 |
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