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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 15:25 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Investigation of an oscillation circuit using Si N-channel MOSFETs for nitride semiconductor integrated circuits. Nanami Teranaka, Yoshiki Akira, Hiroshi Okada (Toyohashi Univ. Technol.) |
[more] | |
| MW | 2024-03-01 14:05 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
[Special Talk]
An Analytical Design Method of Wideband Combiner for Handset Doherty Power Amplifier Shohei Imai, Hiroshi Okabe (Murata)  MW2023-194 |
The development of handset Doherty power amplifier (DPA) is currently focused on achieving high data rates and low power... [more] | MW2023-194 pp.99-103 |
| SDM | 2024-01-31 12:35 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) SDM2023-74 |
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits insi... [more] | SDM2023-74 pp.1-4 |
| SCE | 2024-01-23 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of semiconductor qubit simulator based on TCAD technology Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) |
[more] | |
| SDM | 2023-11-09 15:55 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) SDM2023-67 |
[more] | SDM2023-67 pp.20-25 |
| SDM | 2023-11-10 13:10 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70 |
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] | SDM2023-70 p.35 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 15:25 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19 |
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] | SDM2023-40 ICD2023-19 pp.22-27 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:10 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] | SDM2023-41 ICD2023-20 pp.28-31 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:35 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21 |
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] | SDM2023-42 ICD2023-21 pp.32-35 |
| SDM | 2023-06-26 10:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] | SDM2023-28 pp.5-6 |
| CPM, ED, SDM | 2023-05-19 16:55 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Study of device isolation technology of AlGaN/GaN high-electron-mobility transistors for their integration Tatsuya Akamatsu, Yoshiki Akira, Hiroshi Okada (TUT) ED2023-8 CPM2023-8 SDM2023-25 |
[more] | ED2023-8 CPM2023-8 SDM2023-25 pp.32-35 |
| IN, NS (Joint) |
2023-03-02 14:20 |
Okinawa | Okinawa Convention Centre + Online (Primary: On-site, Secondary: Online) |
Research on Dielectric Waveguides for Enhancing Spatial Resolution in Beyond 5G High Frequency Communications Reishi Mitani (The Univ. of Tokyo), Atsushi Fukuda, Hiroto Yamamoto, Hiroshi Okazaki, Yasunori Suzuki (NTT DOCOMO), Akihiro Nakao (The Univ. of Tokyo) NS2022-191 |
High-frequency communications, which are used in 5G and expected to be Beyond5G, enable high-capacity communicationsbyus... [more] | NS2022-191 pp.139-144 |
| MW | 2022-12-15 14:35 |
Mie | Jingu-Kaikan(Ise) (Primary: On-site, Secondary: Online) |
A Study of Sub-THz Band Transmitter Configuration for 6G Mobile Communication System Yasunori Suzuki, Hiroshi Okazaki, Satoshi Suyama (NTT DOCOMO) MW2022-134 |
This paper presents a sub-THz band transmitter configuration for six-generation mobile communication system. First, we i... [more] | MW2022-134 pp.16-21 |
| SDM | 2022-11-11 13:00 |
Online | Online | [Invited Talk]
Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74 |
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] | SDM2022-74 p.49 |
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:05 |
Online | [Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] | SDM2022-46 ICD2022-14 pp.54-59 |
|
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:50 |
Online | TCAD analysis of threshold voltage increase of short-channel MOSFET in cryogenic operation Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) SDM2022-47 ICD2022-15 |
[more] | SDM2022-47 ICD2022-15 pp.60-63 |
|
| SDM, ED, CPM | 2022-05-27 17:30 |
Online | Online | Study on TiAl-based ohmic electrodes on AlGaN/GaN heterostructures Mao Fukinaka, Yoshiki Akira, Hiroshi Okada (TUT) ED2022-16 CPM2022-10 SDM2022-23 |
[more] | ED2022-16 CPM2022-10 SDM2022-23 pp.39-42 |
| MW | 2022-05-19 15:00 |
Kyoto | Kyoto Univ. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Envelope Tracking Power Amplifiers for 4G/5G mobile handset application Kenji Mukai, Hiroshi Okabe, Satoshi Tanaka (Murata) MW2022-13 |
[more] | MW2022-13 p.1 |
| MW | 2022-03-03 14:45 |
Online | Online | Frequency Characteristics on Vector Regulator Adjustment of Power Amplifier for Massive MIMO Base Stations Kazuya Miyamoto, Shoichi Narahashi (Setsunan Univ.), Yasunori Suzuki, Hiroshi Okazaki (NTT DOCOMO) MW2021-123 |
This paper presents Frequency Characteristics on Vector Regulator Adjustment of 3.5-GHz Band Power Amplifier. Experiment... [more] | MW2021-123 pp.69-72 |
| MW | 2022-03-04 09:20 |
Online | Online | A study of diode linearizer for 100 GHz amplifier toward 6G Sumire Aoki, Hiroshi Hamada, Hiroto Yamamoto, Atsushi Fukuda (NTT DOCOMO), Jyo Teruo, Hiroyuki Takahashi (NTT), Hiroshi Okazaki, Yasunori Suzuki (NTT DOCOMO) MW2021-129 |
Sub-THz band (frequency range above 100 GHz) are gathering attention to implement 6G high-speed wireless communications.... [more] | MW2021-129 pp.100-104 |
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