| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2020-11-20
11:30 |
Online |
Online |
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements --
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech)  SDM2020-30 |
[more] |
SDM2020-30
pp.36-40 |
| SDM |
2019-11-08
13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] |
SDM2019-77
pp.45-48 |
| SDM, ICD, ITE-IST [detail] |
2019-08-08
10:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] |
SDM2019-42 ICD2019-7
pp.31-34 |
| SDM |
2019-01-29
15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] |
SDM2018-90
pp.39-44 |
| SDM |
2016-06-29
13:30 |
Tokyo |
Campus Innovation Center Tokyo |
A resistive switching device based on breakdown and local anodic oxidation
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] |
SDM2016-38
pp.33-36 |
| AP |
2014-02-07
14:05 |
Aichi |
Kojima Industries Corporation, Kojima Research Center |
[Invited Lecture]
Measurement of Propagation Characteristics in Office Environment at 60GHz Band for Interference Cancelling Receivers
Naganori Shirakata, Koichiro Tanaka, Masashi Kobayashi, Tomoya Urushihara, Hiroshi Iwai, Koji Takinami (Panasonic) AP2013-184 |
In this work, broadband propagation channel characteristics are measured at the 60 GHz band in an application-oriented o... [more] |
AP2013-184
pp.103-108 |
| AP |
2013-04-18
14:00 |
Hyogo |
Kwansei Gakuin Univ. |
Experimental Verification of Battery-less Sensor Activation via Multi-point Wireless Energy Transmission
Daiki Maehara (Tokyo Inst. of Tech.), Ryota Akai, Kei Sakaguchi, Seiichi Sampei (Osaka Univ.), Kiyomichi Araki (Tokyo Inst. of Tech.), Hiroshi Iwai (Panasonic) AP2013-7 |
[more] |
AP2013-7
pp.37-42 |
| SDM |
2012-06-21
15:05 |
Aichi |
VBL, Nagoya Univ. |
Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] |
SDM2012-56
pp.69-74 |
| SDM |
2012-06-21
16:35 |
Aichi |
VBL, Nagoya Univ. |
Interface controlled silicide Schottky S/D for future 3D devices
Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) SDM2012-59 |
This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film inte... [more] |
SDM2012-59
pp.87-92 |
| SDM |
2011-10-21
10:50 |
Miyagi |
Tohoku Univ. (Niche) |
AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments
Yuya Numajiri, Koji Yamashita, Arata Komatsu (Tokyo City Univ.), Darius Zade (FRC. Tokyo Inst. of Tech), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech), Hiroshi Nohira (Tokyo City Univ.) SDM2011-106 |
We have investigated the effect of HF, HF + air exposure, (NH4)2S and Hexamethydisilazane treatments on the chemical bon... [more] |
SDM2011-106
pp.53-58 |
| SDM |
2011-07-04
09:00 |
Aichi |
VBL, Nagoya Univ. |
High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50 |
This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] |
SDM2011-50
pp.1-5 |
| SDM |
2011-07-04
10:00 |
Aichi |
VBL, Nagoya Univ. |
Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods
Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] |
SDM2011-53
pp.17-22 |
| SDM |
2011-07-04
11:20 |
Aichi |
VBL, Nagoya Univ. |
Photoluminescence and interface properties of Si nanolayers and nanowires
Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) SDM2011-56 |
Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed ... [more] |
SDM2011-56
pp.35-39 |
| ED, SDM |
2010-07-01
09:30 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
[Keynote Address]
Future perspective for the mainstream CMOS technology and their contribution to green technologies
Hiroshi Iwai (Tokyo Inst. of Tech.) ED2010-76 SDM2010-77 |
[more] |
ED2010-76 SDM2010-77
pp.109-114 |
| SDM |
2010-06-22
10:20 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35 |
Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] |
SDM2010-35
pp.11-16 |
| SDM |
2010-06-22
10:45 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Nickel silicide Encroachment in Silicon Nanowire and its Suppression
Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36 |
Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence o... [more] |
SDM2010-36
pp.17-22 |
| SDM |
2010-06-22
13:45 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm
Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] |
SDM2010-41
pp.43-48 |
| SDM |
2007-06-08
11:20 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] |
SDM2007-44
pp.71-74 |
| AP |
2006-10-20
13:25 |
Kyoto |
Kyoto Univ. (Katsura Campus) |
Resin-housing Effects on the Resonant Frequency of Handset Built-in Antennas
Hiroshi Iwai, Tsutomu Sakata, Atsushi Yamamoto, Koichi Ogawa (Panasonic) AP2006-90 |
Resin-housing effects on the resonant frequency of handset built-in antennas are discussed in this paper. A resin plate ... [more] |
AP2006-90
pp.79-84 |
| AP |
2006-08-24
10:45 |
Niigata |
Toki Messe(Niigata) |
An Investigation of the Interference Rejection Characteristics of a Handset Adaptive Array Antenna using an Optical Fiber Complex Radiation Pattern Measurement System
Satoru Amari, Atsushi Yamamoto, Hiroshi Iwai, Koichi Ogawa (MEI) AP2006-60 |
[more] |
AP2006-60
pp.17-22 |
|