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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, CPM, ED 2010-05-14
14:20		 Shizuoka Shizuoka University (Hamamatsu Campus) Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure
Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32		 We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] ED2010-32 CPM2010-22 SDM2010-32
pp.81-85
ED, CPM, SDM 2006-05-19
09:50		 Aichi VBL, Toyohashi University of Technology Electrical Properties of GaPN
Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.) 		 [more] ED2006-31 CPM2006-18 SDM2006-31
pp.61-65
ED, CPM, SDM 2006-05-19
10:15		 Aichi VBL, Toyohashi University of Technology InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits
Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) 		Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] ED2006-32 CPM2006-19 SDM2006-32
pp.67-72
ED, CPM, SDM 2006-05-19
10:50		 Aichi VBL, Toyohashi University of Technology Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits
Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) 		We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] ED2006-33 CPM2006-20 SDM2006-33
pp.73-78
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