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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2011-11-17
10:05
Kyoto Katsura Hall,Kyoto Univ. AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] ED2011-73 CPM2011-122 LQE2011-96
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