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Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, SDM, ITE-IDY [detail] 2018-12-25
Kyoto   Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate
Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] EID2018-4 SDM2018-77
SDM, OME 2018-04-07
Okinawa Okinawaken Seinen Kaikan [Invited Talk] High Performance and Functional Group-Ⅳ Thin-Film Transistors
Akito Hara, Hiroki Utsumi, Naoki Nishiguchi, Ryo Miyazaki (Tohoku Gakuin Univ.) SDM2018-5 OME2018-5
We have fabricated self-aligned planar double-gate (DG) or self-aligned planar four-terminal (4T) polycrystalline german... [more] SDM2018-5 OME2018-5
SDM, EID 2017-12-22
Kyoto Kyoto University Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate
Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] EID2017-24 SDM2017-85
OME, SDM 2017-04-20
Kagoshima Tatsugochou Shougaigakushuu Center Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare
Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] SDM2017-1 OME2017-1
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