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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
17:30		 Kyoto Kyoto University Resistive switching characteristics of NiO-based ReRAM after semi-forming process.
Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) EID2014-38 SDM2014-133		 In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO de... [more] EID2014-38 SDM2014-133
pp.129-134
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