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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-12-07
10:00		 Kyoto Kyoto Univ. (Katsura) Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115		 Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] SDM2012-115
pp.1-5
SDM 2011-12-16
11:00		 Nara NAIST Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135		 Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] SDM2011-135
pp.17-21
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