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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2015-07-25 11:05 |
Ishikawa | IT Business Plaza Musashi 5F | Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS)  ED2015-45 |
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] | ED2015-45 pp.45-49 |
| ED | 2014-08-01 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Analysis of effects of dislocation scattering on device characteristics of InSb HEMT Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55 |
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the di... [more] | ED2014-55 pp.13-18 |
| ED | 2014-08-01 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) ED2014-57 |
III-V semiconductors have attracted much attention as promising n-type channel materials for the future logic device to ... [more] | ED2014-57 pp.25-28 |
| ED | 2013-08-09 09:25 |
Toyama | University of Toyama | Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45 |
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] | ED2013-45 pp.37-42 |
| ED | 2013-08-09 09:50 |
Toyama | University of Toyama | Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46 |
Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-in... [more] | ED2013-46 pp.43-48 |
| ED | 2012-07-27 09:30 |
Fukui | Fukui University | Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) ED2012-48 |
The strained band structures of InSb are calculated, and then the intrinsic performances of the InSb HEMTs are analyzed... [more] |
ED2012-48 pp.37-42 |
| ED | 2011-07-30 12:05 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) ED2011-53 |
Because of their extremely high electron mobility, InAs and related materials have attracted much attention as promising... [more] | ED2011-53 pp.79-84 |
| ED | 2010-06-18 10:00 |
Ishikawa | JAIST | Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs Takahiro Homma, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Science.) ED2010-42 |
Because of higher carrier mobility owing to small effective mass, III-V compound semiconductors have been attracted much... [more] | ED2010-42 pp.47-52 |
| ED | 2009-06-12 09:30 |
Tokyo | Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) ED2009-44 |
Narrow band gap semiconductors such as InAs and InSb have been attracted much attention as possible channel materials to... [more] | ED2009-44 pp.41-46 |
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