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Committee Date Time Place Paper Title / Authors Abstract Paper #
EE 2021-01-25
13:55
Online Online (Zoom) Analysis on the turn-on transient of cascode connected Polarization Super-Junction GaN-FET
Daisuke Arai (Nagoya Univ.), Yusuke Kamiyama, Shuichi Yagi, Hiroji Kawai, Hironobu Narui (POWDEC), Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2020-32
The turn-on transient of the cascode connected Polarization Super-Junction (PSJ) GaN-FET with 1200V class has been inves... [more] EE2020-32
pp.47-52
CPM, LQE, ED 2010-11-12
10:50
Osaka   Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112
We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] ED2010-156 CPM2010-122 LQE2010-112
pp.63-66
ED 2008-06-13
13:00
Ishikawa Kanazawa University Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure
Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22
By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of A... [more] ED2008-22
pp.1-4
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