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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2009-06-12
10:20		 Tokyo   In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire
Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-46		 In order to obtain high-speed InP heterojunction bipolar transistors (HBTs), it is necessary to reduce the base-collecto... [more] ED2009-46
pp.51-55
ED 2007-06-15
15:50		 Toyama Toyama Univ. DC characteristics of HBT with buried SiO2 wires in collector
Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST) ED2007-37		 The HBT with buried SiO2 in InP collector has low Base-Collector Capacitance(CBC). Therefore this HBT is expected high s... [more] ED2007-37
pp.33-37
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