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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE, WPT
(Joint)		 2016-10-06
16:25		 Kyoto   Drive-by-Microwave(DBM) technologies for power switching devices
Songbek Che, Shuichi Nagai, Noboru Negoro, Yasufumi Kawai, Osamu Tabata, Yasuhiro Yamada, Hiroaki Ueno, Tetsuzo Ueda (Panasonic AIS) EE2016-23 WPT2016-29		 (To be available after the conference date) [more] EE2016-23 WPT2016-29
pp.25-30(EE), pp.55-60(WPT)
CPM, LQE, ED 2013-11-29
16:40		 Osaka   Evaluation of unwanted radiated emission from GaN-HEMT switching circuit
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2013-89 CPM2013-148 LQE2013-124		 The radiated emission from the GaN-HEMT switching converter is investigated by two-dimensional electromagnetic-probe sca... [more] ED2013-89 CPM2013-148 LQE2013-124
pp.117-120
SDM, ED
(Workshop)		 2012-06-29
08:15		 Okinawa Okinawa Seinen-kaikan [Invited Talk] Integrated Design Platform for Power Electronics Applications with GaN Devices
Kenji Mizutani, Hiroaki Ueno, Yuji Kudoh, Shuichi Nagai, Kaoru Inoue, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) 		 [more]
IN, NS
(Joint)		 2009-03-04
15:20		 Okinawa Okinawa-Zanpamisaki Royal Hotel Prototype Development and Experiment of Power Monitoring System in households
Yuichiro Ezure, Kenichi Abe, Akira Matsumoto, Tetsuya Ito, Kiyoshi Taguchi, Hiroaki Ueno (NEC Communication Systems, Ltd.) IN2008-212		 Recently, negative effects of global warming have been widely discussed and several reasons have been identified which a... [more] IN2008-212
pp.475-480
ED, SDM 2007-06-25
13:00		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] AlGaN/GaN Power Transistors for power switching applications
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) 		Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more]
MW, ED 2007-01-19
14:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer
Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.) 		 [more] ED2006-234 MW2006-187
pp.189-192
MW, ED 2007-01-19
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg. A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) 		We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] ED2006-235 MW2006-188
pp.193-197
ED, SDM, R 2006-11-24
16:30		 Osaka Central Electric Club Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film
Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic) 		 [more] R2006-38 ED2006-183 SDM2006-201
pp.39-42
ED, CPM, LQE 2006-10-05
14:40		 Kyoto   GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) 		Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] ED2006-156 CPM2006-93 LQE2006-60
pp.23-27
MW, ED 2005-01-18
09:20		 Tokyo   -
Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.) 		In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state r... [more] ED2004-212 MW2004-219
pp.1-5
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