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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-07-04
09:40
Aichi VBL, Nagoya Univ. Fabrication of SiC-MOSFET with Al2O3 gate insulator
Hiroyuki Yamada, Akio Ishiguro (Tokyo Tech), Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani (Mitsubishi), Eisuke Tokumitsu (Tokyo Tech) SDM2011-52
 [more] SDM2011-52
pp.11-15
ED 2008-10-23
13:00
Fukuoka Kyushu Institute of Technology Crystalline Recovery and Point Defects Re-arrangement during Activation Annealing of Implanted SiC Crystal
Ryo Hattori, Tomokatsu Watanabe, Hiroaki Sumitani, Tatsuo Oomori (Mitsubishi Electric Corp.), Takeshi Mitani (TRC) ED2008-146
 [more] ED2008-146
pp.127-132
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