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SDM 2011-10-20
14:20		 Miyagi Tohoku Univ. (Niche) Reduction of Random Telegraph Noise with Broad Channel MOSFET
Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-98		 Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found th... [more] SDM2011-98
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