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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, SDM | 2024-04-20 16:10 |
Kagoshima | AMA Home Plaza | [Invited Talk]
Ultra-fast Etching of Organic Thin-Films by Atmospheric Pressure Reactive Thermal Plasma Jet Seiichiro Higashi, Kyohei Matsumoto, Hiroaki Hanafusa (Hiroshima Univ.)  SDM2024-6 OME2024-6 |
[more] | SDM2024-6 OME2024-6 pp.20-23 |
| SDM, OME | 2023-04-22 16:10 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Development of wafer temperature measurement system for non-contact temperature measurement during plasma process Ryunosuke Goto, Kenshiro Horiuchi, Jiawen Yu, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) SDM2023-17 OME2023-17 |
[more] | SDM2023-17 OME2023-17 pp.63-66 |
| OME, SDM | 2022-04-23 09:30 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
3-Dimensional Imaging for Transient Thermal Diffusion in Silicon Wafer by Optical Interference Contactless Thermometry (OICT) Kotaro Matsuguchi, Keiya Fujimoto, Yu Jiawen, Hiroaki Hanafusa, Takuma Sato, Seiichiro Higashi (Hiroshima Univ.) SDM2022-8 OME2022-8 |
[more] | SDM2022-8 OME2022-8 pp.39-42 |
| OME | 2020-12-25 13:40 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Measurement of Transient Temperature Change Process inside Silicon Wafer using Optical-Interference Contactless Thermometer(OICT) Yuya Urasaki, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ) |
Optical-Interference Contactless Thermometer(OICT), which was originally developed by our laboratory, is a temperature m... [more] | |
| SDM | 2020-10-22 14:00 |
Online | Online | Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet. Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa (Hiroshima Univ.), Shohei Hayashi (Toray Res. Cent.), Seiichiro Higashi (Hiroshima Univ.) SDM2020-18 |
[more] | SDM2020-18 pp.20-24 |
| OME, SDM | 2017-04-21 10:25 |
Kagoshima | Tatsugochou Shougaigakushuu Center | Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate Using Rotation Stage Wataru Nakano, Tatsuki Hieda, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) |
[more] | |
| SDM | 2014-06-19 11:25 |
Aichi | VBL, Nagoya Univ. | Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] | SDM2014-48 pp.27-30 |
| SDM, ED (Workshop) |
2012-06-27 18:00 |
Okinawa | Okinawa Seinen-kaikan | Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor Shunki Koyanagi, Shohei Hayashi, Tsubasa Mizuno, Kouhei Sakaike, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) |
[more] | |
| SDM, ED | 2007-02-01 14:45 |
Hokkaido | [Invited Talk]
SiGe Quantum Effect Devices Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) |
We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication sys... [more] | ED2006-243 SDM2006-231 pp.17-22 |
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