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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2010-04-22 15:45 |
Kanagawa |
Shonan Institute of Tech. |
A 32-Mb SPRAM with localized bi-directional write driver, '1'/'0' dual-array equalized reference scheme, and 2T1R memory cell layout Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi (Hitachi), Shoji Ikeda (Tohoku Univ.), Haruhiro Hasegawa, Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2010-10 |
A 32-Mb SPin-transfer torque RAM (SPRAM) chip was demonstrated with an access time of 32 ns and a cell write-time of 40 ... [more] |
ICD2010-10 pp.53-57 |
ITE-MMS, MRIS |
2009-10-08 13:55 |
Fukuoka |
FUKUOKA traffic center |
[Invited Talk]
Nonvolatile RAM using spin transfer torque magnetization reversal (SPRAM) Hiromasa Takahashi, Kenchi Ito, Jun Hayakawa, Katsuya Miura, Hiroyuki Yamamoto, Michihiko Yamanouchi (ARL, Hitachi, Ltd.), Kazuo Ono, Riichiro Takemura, Takayuki Kawahara (CRL, Hitachi, Ltd.), Ryutaro Sasaki (RIEC Tohoku Univ.), Haruhiro Hasegawa (RIEC Tohoku Univ., ARL, Hitachi, Ltd.), Shoji Ikeda (RIEC Tohoku Univ.), Hideyuki Matsuoka (ARL, Hitachi, Ltd.), Hideo Ohno (RIEC Tohoku Univ.) |
The SPRAM (Spin Transfer Torque MRAM) is one of nonvolatile memories that “writing” is done by that a magnetization in M... [more] |
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ICD, SDM |
2007-08-24 15:15 |
Hokkaido |
Kitami Institute of Technology |
SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion Katsuya Miura, Takayuki Kawahara, Riichiro Takemura (Hitachi, Ltd.), Jun Hayakawa (Hitachi, Ltd./Tohoku Univ.), Michihiko Yamanouchi (Hitachi, Ltd.), Shoji Ikeda, Ryutaro Sasaki (Tohoku Univ.), Kenchi Ito, Hiromasa Takahashi, Hideyuki Matsuoka (Hitachi, Ltd.), Hideo Ohno (Tohoku Univ.) SDM2007-166 ICD2007-94 |
SPin-transfer torque RAM (SPRAM) with MgO-barrier-based magnetic tunnel junctions (MTJs) is a promising candidate for a ... [more] |
SDM2007-166 ICD2007-94 pp.135-138 |
ICD |
2007-04-12 13:00 |
Oita |
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[Invited Talk]
2-Mb SPRAM (SPin-transfer torque RAM) with Bit-by-bit Bi-Directional Current Write and Parallelizing-Direction Current Read Riichiro Takemura, Takayuki Kawahara, Katsuya Miura (Hitachi), Jun Hayakawa (Hitachi/Tohoku Univ.), Shoji Ikeda, Young Min LEE, Ryutaro Sasaki (Tohoku Univ.), Yasushi Goto, Kenchi Ito (Hitachi), Toshiyasu Meguro, Fumihiro Matsukura (Tohoku Univ.), Hiromasa Takahashi (Hitachi/Tohoku Univ.), Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2007-6 |
A 1.8-V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2 µm logic process with MgO tunneling barrier cell demo... [more] |
ICD2007-6 pp.29-34 |
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