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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-26
14:25
Osaka Osaka City University Media Center A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)
Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] ED2015-75 CPM2015-110 LQE2015-107
pp.39-42
SDM 2015-11-06
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN-based devices on Si substrates for power conversion systems
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] SDM2015-90
pp.35-38
OFT 2013-05-23
15:55
Okinawa   All plastic ferrule utilizing Multi Mode Fiber for interconnection
Masaki Ohmura (SEI), Hidetoshi Ishida, Hiroyoshi Maesoba (AutoNetworks Technologies), Tatsuhiko Shitomi (NTD), Kenichiro Ohtsuka, Tomomi Sano, Tomoyuki Hattori (SEI) OFT2013-5
To realize the cost reduction of connecting optical fibers, we have
developed the All plastic ferrule. We have examine... [more]
OFT2013-5
pp.19-22
ED, MW 2012-01-12
14:30
Tokyo Kikai-Shinko-Kaikan Bldg High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer
Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160
 [more] ED2011-137 MW2011-160
pp.101-105
MW, ED 2009-01-14
15:25
Tokyo Kikai-Shinko-Kaikan Bldg GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] ED2008-202 MW2008-167
pp.23-27
MW 2008-08-28
14:20
Osaka Osaka-Univ. (Toyonaka) K-band AlGaN/GaN-based MMICs on sapphire substrates
Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] MW2008-85
pp.37-40
SDM, ED 2008-07-11
10:50
Hokkaido Kaderu2・7 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
SDM, ED 2008-07-11
14:20
Hokkaido Kaderu2・7 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] ED2008-103 SDM2008-122
pp.331-335
ED, MW 2008-01-16
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] AlGaN/GaN Power Transistors for power switching applications
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita)
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more]
MW, ED 2007-01-19
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] ED2006-235 MW2006-188
pp.193-197
ED, SDM, R 2006-11-24
16:30
Osaka Central Electric Club Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film
Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic)
 [more] R2006-38 ED2006-183 SDM2006-201
pp.39-42
ED, MW 2006-01-19
14:10
Tokyo Kikai-Shinko-Kaikan Bldg. Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] ED2005-205 MW2005-159
pp.35-39
 Results 1 - 13 of 13  /   
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