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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 43  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
14:35
Shizuoka Shizuoka Univ. (Hamamatsu) AlGaN-based electron beam excitation UV lasers using AlGaN well layer
Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86
(To be available after the conference date) [more] ED2019-43 CPM2019-62 LQE2019-86
pp.45-48
CPM, LQE, ED 2019-11-22
13:25
Shizuoka Shizuoka Univ. (Hamamatsu) Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer
Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] ED2019-55 CPM2019-74 LQE2019-98
pp.93-96
ED, LQE, CPM 2018-11-30
14:05
Aichi Nagoya Inst. tech. Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire
Ryo Fukuta, Kanako Shojiki, Jiang Nan, Kenjiro Uesugi, Yusuke Hayashi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2018-50 CPM2018-84 LQE2018-104
 [more] ED2018-50 CPM2018-84 LQE2018-104
pp.83-86
EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] 2018-01-25
14:15
Hyogo   The study on propagation characteristic of the propagation type surface plasmon in the Double-layer Wire Grid Structure.
Naoya Watanabe, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2017-46 EMT2017-83 OPE2017-124 LQE2017-106 EST2017-82 MWP2017-59
Wire Grid structure is the structure that various application is expected. The application such as a light polarizer and... [more] PN2017-46 EMT2017-83 OPE2017-124 LQE2017-106 EST2017-82 MWP2017-59
pp.41-45
EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] 2018-01-25
14:40
Hyogo   Characteristic of Surface Plasmon Excitation and Sensitivity of Surface Plasmon Sensor using the 1D Metal Diffraction Grating
Yusuke Ito, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2017-47 EMT2017-84 OPE2017-125 LQE2017-107 EST2017-83 MWP2017-60
 [more] PN2017-47 EMT2017-84 OPE2017-125 LQE2017-107 EST2017-83 MWP2017-60
pp.47-52
LQE, CPM, ED 2017-12-01
14:45
Aichi Nagoya Inst. tech. Homoepitaxial growth on sputtered AlN templates by MOVPE
Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] ED2017-66 CPM2017-109 LQE2017-79
pp.83-86
LQE, CPM, ED 2017-12-01
15:10
Aichi Nagoya Inst. tech. Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG
Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.) ED2017-67 CPM2017-110 LQE2017-80
 [more] ED2017-67 CPM2017-110 LQE2017-80
pp.87-90
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-18
11:25
Mie Iseshi Kanko Bunka Kaikan The Period and the Incident Angle Dependence of Surface Plasmon Sensor using the 1D Metal Diffraction Grating and its Sensitivity Characteristic
Yusuke Ito, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2016-44 EMT2016-73 OPE2016-119 LQE2016-108 EST2016-83 MWP2016-57
The surface plasmon sensor is possible to detect to the target medium by using the excitation of surface plasmon polarit... [more] PN2016-44 EMT2016-73 OPE2016-119 LQE2016-108 EST2016-83 MWP2016-57
pp.13-18
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-18
11:50
Mie Iseshi Kanko Bunka Kaikan A study on fabrication and polarization characteristic of a wire grid polarizer by using surface plasmon
Tomoyasu Nakajima, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2016-45 EMT2016-74 OPE2016-120 LQE2016-109 EST2016-84 MWP2016-58
In order to obtain WGP with high excitation ratio, the optical properties of a double-layer wire grid polarizer (WGP) is... [more] PN2016-45 EMT2016-74 OPE2016-120 LQE2016-109 EST2016-84 MWP2016-58
pp.19-22
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-19
15:25
Mie Iseshi Kanko Bunka Kaikan Fabrication and optical characterization of the optical element by the Au two-dimensional diffraction grating structure
Taishi Yamada, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2016-82 EMT2016-111 OPE2016-157 LQE2016-146 EST2016-121 MWP2016-95
For the realization of the optical mirror, we fabricated the Au two-dimensional diffraction grating using an electron be... [more] PN2016-82 EMT2016-111 OPE2016-157 LQE2016-146 EST2016-121 MWP2016-95
pp.269-272
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] 2017-01-19
15:50
Mie Iseshi Kanko Bunka Kaikan Fabrication of the diffractive lens and controlling of the focal length and the depth of focus
yosuke iguchi, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ) PN2016-83 EMT2016-112 OPE2016-158 LQE2016-147 EST2016-122 MWP2016-96
The focus controlling diffractive lens that could control the focal length and depth of focus was designed by structure ... [more] PN2016-83 EMT2016-112 OPE2016-158 LQE2016-147 EST2016-122 MWP2016-96
pp.273-278
ED, LQE, CPM 2015-11-26
10:55
Osaka Osaka City University Media Center Growth of AlN with annealing on different misoriented c-plane sapphire
Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] ED2015-69 CPM2015-104 LQE2015-101
pp.5-9
ED, LQE, CPM 2015-11-26
11:20
Osaka Osaka City University Media Center AlN growth on AlN/Sapphire substrate by RF-HVPE
Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] ED2015-70 CPM2015-105 LQE2015-102
pp.11-14
OPE, LQE 2014-12-18
11:05
Tokyo Kikai-Shinko-Kaikan, NTT Atsugi R&D center Fabrication of the 2D metal grating structure for the application to an optical filter and optical characterization
Masanori Kito, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) OPE2014-141 LQE2014-128
As heat-ray shielding steps replacing conventional technique, we fabricated the 2D metal grating structure by electron b... [more] OPE2014-141 LQE2014-128
pp.11-14
LQE, ED, CPM 2014-11-27
11:50
Osaka   Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE
Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO) ED2014-76 CPM2014-133 LQE2014-104
 [more] ED2014-76 CPM2014-133 LQE2014-104
pp.15-18
LQE, ED, CPM 2014-11-28
16:00
Osaka   Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] ED2014-96 CPM2014-153 LQE2014-124
pp.111-115
CPM, ED, SDM 2014-05-29
11:15
Aichi   Surface treatment and homoepitaxial growth on AlN substrate
Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral) ED2014-37 CPM2014-20 SDM2014-35
Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-u... [more] ED2014-37 CPM2014-20 SDM2014-35
pp.97-100
CPM, LQE, ED 2013-11-29
11:00
Osaka   Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate
Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. ... [more] ED2013-79 CPM2013-138 LQE2013-114
pp.71-74
CPM, LQE, ED 2013-11-29
11:25
Osaka   Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE
Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2013-80 CPM2013-139 LQE2013-115
AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and exc... [more] ED2013-80 CPM2013-139 LQE2013-115
pp.75-78
CPM, LQE, ED 2013-11-29
11:50
Osaka   Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE
Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2013-81 CPM2013-140 LQE2013-116
Aluminum nitride (AlN) has a direct bandgap energy of 6.2 eV, which is the largest bandgap energy among III-V semiconduc... [more] ED2013-81 CPM2013-140 LQE2013-116
pp.79-82
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