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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
Online Online Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT
Hidemasa Takahashi, Yuji Ando (Nagoya Univ.), Yoichi Tsuchiya, Akio Wakejima (NITECH), Hiroaki Hayashi, Eiji Yagyu (Mitsubishi Electric), Koichi Kikkawa, Naoki Sakai, Kenji Itoh (Kanazawa Institute of Tech), Jun Suda (Nagoya Univ.) WPT2020-19
As a device for wireless power transmission, we are developing a new rectenna that uses a gated anode diode (GAD) that s... [more] WPT2020-19
Okinawa Okinawa Convention Center A Study on Application of HSS in Fixed IP Network -- A Study on OPEX Reduction of SIP Server Migration --
Hidemasa Takahashi, Hirozumi Takesue, Koji Tanida, Kenichiro Matsumoto (NTT) NS2010-234
NGN (Next Generation Network) is an unified network of data and voice communication services based on IP. Now NGN commer... [more] NS2010-234
ED, MW 2008-01-17
Tokyo Kikai-Shinko-Kaikan Bldg. 1.8 V operation Power Amplifier IC for Bluetooth Class 1 utilizing p+-GaAs Gate Hetero-junction FET
Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata (NEC Electronics) ED2007-221 MW2007-152
We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V. We can realize it... [more] ED2007-221 MW2007-152
MW, ED 2007-01-19
Tokyo Kikai-Shinko-Kaikan Bldg. A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations
Isao Takenaka, Koji Ishikura, Hidemasa Takahashi, Koichi Hasegawa, Takashi Ueda, Toshimichi Kurihara, Kazunori Asano, Naotaka Iwata (NEC Electronics)
A low distortion Doherty high-power amplifier has been developed for cellular base stations. The amplifier delivered 330... [more] ED2006-227 MW2006-180
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