IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 37  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2024-02-29
13:45
Yamagata Yamagata University
(Primary: On-site, Secondary: Online)
Effects of O doping on Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa (Hirosaki Univ.) CPM2023-105
We have prepared silicon-, nitrogen- and oxygen-doped diamond-like carbon (Si–N–O-DLC) films via plasma-enhanced chemica... [more] CPM2023-105
pp.38-41
MRIS, CPM, ITE-MMS, OME [detail] 2023-10-27
10:30
Niigata Niigata Univ. Ekiminami Campus
(Primary: On-site, Secondary: Online)
Mechanical properties and heat resistance of Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yuya Sasaki, Hideki Nakazawa (Hirosaki Univ.) MRIS2023-17 CPM2023-51 OME2023-38
Silicon- and nitrogen-doped diamond-like carbon (Si–N–DLC) films have been deposited by plasma-enhanced chemical vapor d... [more] MRIS2023-17 CPM2023-51 OME2023-38
pp.33-36
CPM 2023-08-01
09:45
Hokkaido
(Primary: On-site, Secondary: Online)
Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon
Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2023-19
We have grown aluminum nitride (AlN) films on 3 ̊off-axis Si(110) substrates by pulsed laser deposition (PLD) and formed... [more] CPM2023-19
pp.29-32
CPM 2023-02-28
11:30
Tokyo Tokyo University of Technology
(Primary: On-site, Secondary: Online)
Photovoltaic properties of boron carbide thin films prepared by magnetron sputtering using hydrogen gas
Tatsuya Nishida, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2022-94
 [more] CPM2022-94
pp.35-38
CPM 2022-08-04
16:15
Hokkaido   Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering
Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Hirokazu Fukidome (Touhoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2022-15
We have deposited amorphous boron carbide (B4C) films and hydrogenated amorphous B4C (B4C:H) films by RF magnetron sputt... [more] CPM2022-15
pp.14-17
CPM 2021-10-27
13:20
Online Online Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2021-26
We have deposited silicon and nitrogen doped diamond-like carbon (Si–N–DLC) films by radio frequency plasma-enhanced che... [more] CPM2021-26
pp.23-28
CPM 2020-10-29
13:40
Online Online Effects of SiC low-temperature buffer layer on SiC epitaxial growth on AlN/Si(110) substrate
Hiroki Kasai, Yuki Nara, Hideki Nakazawa (Hirosaki Univ.) CPM2020-13
 [more] CPM2020-13
pp.7-10
CPM 2020-10-29
15:10
Online Online Hydrogen effects on the properties of BCN films deposited by magnetron sputtering
Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta (Hirosaki Univ.), Hirokazu Fukidome (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2020-17
 [more] CPM2020-17
pp.23-26
CPM 2019-11-07
15:00
Fukui Fukui univ. Annealing effects on the properties of nitrogen doped DLC films
Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2019-46
We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] CPM2019-46
pp.9-14
CPM 2019-08-26
15:50
Hokkaido Kitami Institute of Technology Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon
Hideki Nakazawa, Yuki Nara, Hiroki Kasai (Hirosaki Univ.) CPM2019-42
We have grown AlN films on off-axis Si(110) substrates by pulsed laser deposition (PLD) and then formed SiC buffer layer... [more] CPM2019-42
pp.23-28
CPM 2019-02-28
15:25
Tokyo   Preparation and characterization of carbon related thin films
Hideki Nakazawa (Hirosaki U) CPM2018-109
 [more] CPM2018-109
pp.37-40
CPM, IEE-MAG 2018-11-02
14:25
Niigata Machinaka campus Nagaoka Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] CPM2018-52
pp.99-104
CPM 2018-08-09
14:30
Aomori Hirosaki Univ. Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8
We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and ... [more] CPM2018-8
pp.1-6
CPM 2018-08-09
14:50
Aomori Hirosaki Univ. Growth of graphene on SiC/AlN/Si(110) substrates
Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta (Hirosaki Univ.) CPM2018-9
We have grown aluminum nitride (AlN) films on 3º off-axis Si(110) substrates by pulsed laser deposition (PLD), and inves... [more] CPM2018-9
pp.7-12
CPM 2018-08-09
15:10
Aomori Hirosaki Univ. Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures
Yuki Nara, Asahi Kudo, Hideki Nakazawa (Hirosaki Univ.) CPM2018-10
We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN tar... [more] CPM2018-10
pp.13-16
CPM 2018-08-09
16:05
Aomori Hirosaki Univ. Study on the formation mechanism of Bi-mediated Ge nanodots fabricated by vacuum evaporation
Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh (NTT), Takayuki Ikeda, Seiichiro Mizuno (NTT-AT), Hiroshi Okamoto (Hirosaki Univ.) CPM2018-12
 [more] CPM2018-12
pp.21-24
R, EMD, CPM, LQE, OPE 2017-08-31
13:55
Aomori   Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition
Yuki Nara, Syunki Narita, Hideki Nakazawa (Hirosaki Univ.) R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22
We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN tar... [more] R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22
pp.7-10
CPM 2015-08-10
13:20
Aomori   Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition
Kazuki Meguro, Shunki Narita, Hideki Nakazawa (Hirosaki Univ.) CPM2015-31
We have formed a SiC interfacial buffer layer on AlN/Si(110) substrates at a low temperature, and grew SiC films on the ... [more] CPM2015-31
pp.1-5
CPM 2015-08-10
13:40
Aomori   Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition
Masato Tsuchiya, Kazuki Murakami, Tatsuhito Satou, Takahiro Takami, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2015-32
We have deposited nitrogen-doped diamond-like carbon (N-DLC) films by RF plasma-enhanced chemical vapor deposition using... [more] CPM2015-32
pp.7-10
CPM 2015-08-10
14:00
Aomori   Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition
Shunki Narita, Kazuki Meguro, Hideki Nakazawa (Hirosaki Univ.) CPM2015-33
We have grown aluminum nitride (AlN) films on Si(110) substrate by pulsed laser deposition using an AlN target, and inve... [more] CPM2015-33
pp.11-14
 Results 1 - 20 of 37  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan