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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-06-19 11:25 |
Aichi | VBL, Nagoya Univ. | Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)  SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] | SDM2014-48 pp.27-30 |
| SDM | 2013-06-18 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56 |
[more] | SDM2013-56 pp.61-66 |
| SDM, ED (Workshop) |
2012-06-28 08:45 |
Okinawa | Okinawa Seinen-kaikan | Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio Ohta (Hiroshima Univ.), Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 09:45 |
Okinawa | Okinawa Seinen-kaikan | Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM | 2012-06-21 11:15 |
Aichi | VBL, Nagoya Univ. | Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49 |
[more] | SDM2012-49 pp.33-36 |
| SDM | 2012-06-21 13:55 |
Aichi | VBL, Nagoya Univ. | Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-53 |
[more] | SDM2012-53 pp.53-58 |
| SDM | 2012-06-21 14:45 |
Aichi | VBL, Nagoya Univ. | Chemical Analysis of As+-implanted Ge(100) Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-55 |
[more] | SDM2012-55 pp.63-67 |
| SDM | 2011-07-04 12:00 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-58 |
To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiOx ultrathin layer wi... [more] | SDM2011-58 pp.47-50 |
| SDM | 2011-07-04 14:00 |
Aichi | VBL, Nagoya Univ. | Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-61 |
We have investigated chemical bonding features at thermally-grown GeO2/Ge(100) and metals (Al, Au and Pt)/GeO2 interface... [more] | SDM2011-61 pp.63-68 |
| SDM | 2011-07-04 16:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67 |
Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] | SDM2011-67 pp.97-102 |
| ED, SDM | 2010-06-30 14:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-57 SDM2010-58 |
Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt electrodes has b... [more] |
ED2010-57 SDM2010-58 pp.31-36 |
| ED, SDM | 2010-07-02 12:30 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-94 SDM2010-95 |
[more] | ED2010-94 SDM2010-95 pp.189-194 |
| SDM | 2010-06-22 11:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electrical Properties of Ge MIS and Ge/Metal Structures Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-38 |
[more] | SDM2010-38 pp.27-32 |
| SDM | 2010-06-22 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | The influence of Y incorporation into TiO2 on Electronic States and Resistive Switching Characteristics Akio Ohta, Yuta Goto, Mohd Fairuz Kamarulzaman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-47 |
[more] | SDM2010-47 pp.79-84 |
| SDM, ED | 2009-06-25 12:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor Hideki Murakami, Syed Mahboob, Kiyotaka Katayama, Katsunori Makihara, Mitsuhisa Ikeda, Yumehiro Hata, Akio Kuroda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2009-87 SDM2009-82 |
We have focused on silica binding protein(SBP)-tagged protein A as a key element for bio-sensing since this combined pro... [more] | ED2009-87 SDM2009-82 pp.161-164 |
| SDM | 2009-06-19 14:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-36 |
The chemical bonding features of ultrathin Ge oxide layers, which were prepared on Ge(100) by wet-chemical treatment, lo... [more] | SDM2009-36 pp.57-60 |
| SDM | 2009-06-19 17:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) SDM2009-44 |
We focused on the interfacial reaction between TiO2 and Pt to gain a better understanding of the mechanism of resistive ... [more] | SDM2009-44 pp.99-103 |
| SDM | 2007-12-14 13:30 |
Nara | Nara Institute Science and Technology | In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-228 |
In-situ measurement technique of temperature profile in Si wafer during millisecond rapid thermal annealing has been dev... [more] | SDM2007-228 pp.27-29 |
| MI | 2007-11-16 14:00 |
Ishikawa | Kanazawa Univ. | A Study of Osteoporosis Therapeutic Effect on Vertebral Bone by Using Image Based Mechanical Analysis Jiro Sakamoto, Yusuke Sakurai (Kanazawa Univ.), Daisuke Tawara (RIKEN), Hideki Murakami, Norio Kawahara, Juhachi Oda, Katsuro Tomita (Kanazawa Univ.) MI2007-55 |
The authors have studied risk evaluation method of vertebral compressive fracture by using patient-specific finite-eleme... [more] | MI2007-55 pp.31-36 |
| ED, SDM | 2007-06-25 14:15 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | Impact of Boron Doping to Si Quantum Dots on Light Emission Properties Kazuki Okuyama, Katsunori Makihara, Akio Ohta, Hideki Murakami, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
[more] | |
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