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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-11-12
11:30
Online Online [Invited Talk] Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu)
 [more]
SDM, ICD, ITE-IST [detail] 2021-08-17
10:15
Online Online [Invited Talk] Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] SDM2021-30 ICD2021-1
pp.1-6
SDM 2019-11-08
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] SDM2019-74
pp.27-32
SDM, ICD, ITE-IST [detail] 2019-08-07
14:15
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2
Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel
materials which ... [more]
SDM2019-37 ICD2019-2
pp.7-10
SDM 2019-01-29
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
pp.1-4
SDM 2018-11-09
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
pp.47-52
SDM 2018-01-30
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation
Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91
 [more] SDM2017-91
pp.1-4
SDM 2017-11-09
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN MOS capacitance simulation considering deep traps
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] SDM2017-66
pp.27-32
SDM, ICD, ITE-IST [detail] 2017-07-31
12:00
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. TCAD Simulation of C-TFET Circuit with Drain Offset Structure
Hidehiro Asai, Takahiro Mori, Junich Hattori, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa (AIST) SDM2017-35 ICD2017-23
We have performed TCAD simulation for a ring oscillator composed of complementary Tunnel Field Effect Transistors (C-TFE... [more] SDM2017-35 ICD2017-23
pp.21-24
SDM 2017-01-30
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] SDM2016-130
pp.1-4
QIT
(2nd)
2013-05-27
- 2013-05-28
Hokkaido Hokkaido Univ. [Poster Presentation] Inter-band fluctuations in macroscopic quantum tunneling with two-band superconductors
Yukihiro Ota, Franco Nori (RIKEN), Hidehiro Asai, Shiro Kawabata (AIST)
 [more]
 Results 1 - 11 of 11  /   
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