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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 23  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SS 2017-03-09
11:00
Okinawa  
Akito Tanikado, Haruki Yokoyama, Soichi Sumi, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) SS2016-63
(To be available after the conference date) [more] SS2016-63
pp.19-24
MSS, SS 2017-01-27
16:30
Kyoto Kyoto Institute of Technology Evaluating Automated Program Repair using Metrics of Defects
Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) MSS2016-79 SS2016-58
(To be available after the conference date) [more] MSS2016-79 SS2016-58
pp.129-134
SS 2016-03-10
15:15
Okinawa   Investigation of Differences between Human-Written Patches and Automatically Generated Patches
Hiroki Nakajima, Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) SS2015-87
(To be available after the conference date) [more] SS2015-87
pp.67-72
SS 2016-03-10
16:05
Okinawa   Reducing Reuse Candidates on Reuse-Based Automated Program Repair Using "Freshness"
Masahiro Yamamoto, Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) SS2015-89
(To be available after the conference date) [more] SS2015-89
pp.79-84
LQE, OPE 2015-06-19
16:15
Tokyo   High-linearity avalanche photodiode and its application for 28Gbaud PAM4 operation
Masahiro Nada, Takuya Hoshi, Hirofumi Yamazaki, Haruki Yokoyama, Toshikazu Hashimoto, Hideaki Matsuzaki (NTT) OPE2015-19 LQE2015-29
We present a unique configuration of high-speed avalanche photodiode (APD) for ensuring high linearity. The APD exhibits... [more] OPE2015-19 LQE2015-29
pp.43-46
SS 2015-05-12
09:15
Kumamoto Kumamoto University Investigation for Reducing Reuse Candidates on Reuse-based Automated Program Repair
Haruki Yokoyama, Takafumi Ohta, Keisuke Hotta, Yoshiki Higo (Osaka Univ.), Kozo Okano (Shinshu Univ.), Shinji Kusumoto (Osaka Univ.) SS2015-10
(To be available after the conference date) [more] SS2015-10
pp.47-52
LQE, ED, CPM 2014-11-28
15:10
Osaka   Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] ED2014-94 CPM2014-151 LQE2014-122
pp.103-106
EMD, LQE, OPE, CPM, R 2014-08-22
11:30
Hokkaido Otaru Economy Center High-speed avalanche photodiodes with vertical illumination structure for reliability and stability
Masahiro Nada, Haruki Yokoyama, Yoshifumi Muramoto, Hideaki Matsuzaki (NTT) R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45
 [more] R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45
pp.91-94
CPM, LQE, ED 2013-11-28
14:20
Osaka   Investigation on the optimum MQW structure for InGaN/GaN solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105
We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] ED2013-70 CPM2013-129 LQE2013-105
pp.31-34
LQE, OCS, OPE 2013-10-25
11:15
Fukuoka   High-performance InAlAs avalanche photodiode for 25-Gbit/s applications
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Tadao Ishibashi, Hideaki Matsuzaki (NTT) OCS2013-69 OPE2013-115 LQE2013-85
 [more] OCS2013-69 OPE2013-115 LQE2013-85
pp.99-102
ED, LQE, CPM 2012-11-29
13:30
Osaka Osaka City University Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] ED2012-70 CPM2012-127 LQE2012-98
pp.21-24
EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] 2012-01-27
14:40
Osaka Osaka Univ. Convention Center Heterogeneous-integrated optoelectronic receiver on a silica-based PLC platform
Yu Kurata, Yusuke Nasu, Munehisa Tamura, Yoshifumi Muramoto, Haruki Yokoyama (NTT) PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93
We proposed the heterogeneous integration of high-speed InP PDs on a silica-based PLC platform. A high-speed photo-detec... [more] PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93
pp.299-304
ED, MW 2012-01-12
10:35
Tokyo Kikai-Shinko-Kaikan Bldg Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] ED2011-130 MW2011-153
pp.63-68
OPE, EMT, LQE, PN, IEE-EMT [detail] 2011-01-28
10:50
Osaka Osaka Univ. High-gain operation of avalanche photodiodes with InP/InGaAs new structures
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Satoshi Kodama (NTT) PN2010-44 OPE2010-157 LQE2010-142
Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside... [more] PN2010-44 OPE2010-157 LQE2010-142
pp.103-106
ED 2010-12-16
14:10
Miyagi Tohoku University (Research Institute of Electrical Communication) Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators
Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] ED2010-159
pp.7-12
ED, SDM 2010-06-30
16:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] ED2010-61 SDM2010-62
pp.47-48
OPE, LQE 2010-06-25
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. Composite Field MIC-PD for Low Bias and High Input Power Operation
Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18
Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] OPE2010-16 LQE2010-18
pp.7-10
ED 2009-11-30
09:00
Osaka Osaka Science & Technology Center Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] ED2009-166
pp.37-40
ED 2007-06-15
16:15
Toyama Toyama Univ. MOVPE growth of high-quality InP-based resonant tunneling diodes
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38
InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organ... [more] ED2007-38
pp.39-43
MW, ED 2007-01-19
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition
Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT)
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] ED2006-233 MW2006-186
pp.183-187
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