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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-09
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Topography Simulation of Trench-Filling Growth of 4H-SiC
Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST) SDM2018-70
A topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for 4H-SiC superjun... [more] SDM2018-70
pp.29-34
SDM, EID 2017-12-22
10:45
Kyoto Kyoto University Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-12 SDM2017-73
pp.5-8
SDM, EID 2017-12-22
11:00
Kyoto Kyoto University Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC -- Relationship between Inversion of Hall Coefficient and Conduction Mechanism --
Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-13 SDM2017-74
pp.9-12
SDM, EID 2017-12-22
11:15
Kyoto Kyoto University Electric properties in Al-N codoped p-type 4H-SiC epilayers -- Comparison between temperature dependent resistivity in Al-doped and codoped samples --
Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] EID2017-14 SDM2017-75
pp.13-16
SDM 2013-06-18
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Challenges of high-reliability in SiC-MOS gate structures
Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST) SDM2013-60
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally ... [more] SDM2013-60
pp.81-86
SDM 2013-06-18
17:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] 4H-SiC MOS interface states studied by electron spin resonance spectroscopy
T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] SDM2013-64
pp.101-105
 Results 1 - 6 of 6  /   
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