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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2008-07-17
09:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM
Gen Tsutsui, Kazuaki Tsunoda, Nayuta Kariya, Yutaka Akiyama, Tomohisa Abe, Shinya Maruyama, Tadashi Fukase, Mieko Suzuki, Yasushi Yamagata, Kiyotaka Imai (NECEL) SDM2008-130 ICD2008-40		  [more] SDM2008-130 ICD2008-40
pp.11-16
SDM 2008-06-09
17:15		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Mobility Enhancement in Ultra Thin Body SOI MOSFETs by Quantum Confinement Effects
Toshiro Hiramoto, Ken Shimizu, Gen Tsutsui (Univ. of Tokyo) SDM2008-47		  [more] SDM2008-47
pp.29-34
ICD, SDM 2005-08-18
11:10		 Hokkaido HAKODATE KOKUSAI HOTEL Experimental Study on the Mobility Superiority in (110)-oriented Ultra-thin Body pMOSFETs
Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto (Univ. of Tokyo) 		Ultra-thin body (UTB) SOI MOSFET is one of the most promising structures for future VLSIs because of its high short chan... [more] SDM2005-133 ICD2005-72
pp.31-36
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