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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-27
11:50		 Osaka   Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE
Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO) ED2014-76 CPM2014-133 LQE2014-104		  [more] ED2014-76 CPM2014-133 LQE2014-104
pp.15-18
ED, LQE, CPM 2012-11-30
14:05		 Osaka Osaka City University Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source
Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113		 AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 ... [more] ED2012-85 CPM2012-142 LQE2012-113
pp.93-96
CPM, LQE, ED 2010-11-11
13:50		 Osaka   Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation
Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HPK) 		 [more]
ED, LQE, CPM 2009-11-19
09:50		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) MOVPE growth and optical properties of AlGaN on AlN/sapphire
Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-130 CPM2009-104 LQE2009-109		 We performed growth of AlGaN on AlN/sapphire substrate as an underlying layer by low-pressure MOVPE with in-situ monitor... [more] ED2009-130 CPM2009-104 LQE2009-109
pp.9-12
ED, CPM, SDM 2009-05-15
13:00		 Aichi Satellite Office, Toyohashi Univ. of Technology MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire
Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-32 CPM2009-22 SDM2009-22		 A high-quality AlGaN with high Al mole fraction is required for improvement of device performance such as light-emitting... [more] ED2009-32 CPM2009-22 SDM2009-22
pp.77-81
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