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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-24
15:00		 Overseas Haeundae Grand Hotel, Busan, Korea Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47		 In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] ED2009-52 SDM2009-47
pp.9-12
SDM, ED 2009-06-24
15:15		 Overseas Haeundae Grand Hotel, Busan, Korea Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48		 In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] ED2009-53 SDM2009-48
pp.13-16
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