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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate
Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-157 CPM2009-131 LQE2009-136
We have fabricated high RF power output devices using GaN-HEMT on Si substrate, that can be screened out by Hg probe C-V... [more] ED2009-157 CPM2009-131 LQE2009-136
ED 2009-06-12
Tokyo   Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film.
Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.) ED2009-47
Normally-off characteristics are needed from the viewpoint of safety when AlGaN/GaN-HEMT applies for the high power swit... [more] ED2009-47
SDM, ED 2008-07-11
Hokkaido Kaderu2・7 AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] ED2008-105 SDM2008-124
ED, MW 2008-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs
Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] ED2007-208 MW2007-139
ED, CPM, LQE 2006-10-05
Kyoto   RF characteristics of AlGaN/GaN-HEMTs on Si substrates
Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT)
 [more] ED2006-154 CPM2006-91 LQE2006-58
MW, ED 2005-01-18
Tokyo   -
Masanori Itoh, Katsuaki Kaifu, Juro Mita, Hideyuki Okita, Fumihiko Toda, Yoshiaki Sano, Shohei Seki (OKI), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.)
 [more] ED2004-215 MW2004-222
 Results 1 - 6 of 6  /   
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