| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EMD, LQE, OPE, CPM, R | 2014-08-22 15:25 |
Hokkaido | Otaru Economy Center | Tunable Laser with Unequally Spaced Passive Waveguides for Backside Wavelength Monitor Yoshifumi Sasahata, Keisuke Matsumoto, Takashi Nagira, Hitoshi Sakuma, Kazumasa Kishimoto, Masato Suzuki, Daisuke Suzuki, Yuichiro Horiguchi, Masakazu Takabayashi, Keita Mochizuki, Mitsunobu Gotoda, Hiroshi Aruga, Eitaro Ishimura (Mitsubishi Electric Corporation)  R2014-48 EMD2014-53 CPM2014-68 OPE2014-78 LQE2014-52 |
We have developed tunable 16 DFB laser array with unequally spaced passive waveguides for backside wavelength monitor fo... [more] | R2014-48 EMD2014-53 CPM2014-68 OPE2014-78 LQE2014-52 pp.127-131 |
| OCS | 2013-07-25 13:30 |
Tokyo | Sumida-Sangyo-Kaikan | Experimental Demonstration of All-Optical Network Coding by Use of SOA-MZI Wavelength Converters Daisuke Hisano, Akihiro Maruta (Osaka Univ.), Nobuo Ohata, Hiroshi Aruga, Eitaro Ishimura, Atsushi Sugitatsu (Mitsubishi Electric), Ken-ichi Kitayama (Osaka Univ.) OCS2013-19 |
We experimentally demonstrate all-optical network coding by showing cascaded operation of optical XOR gates. The gate co... [more] | OCS2013-19 pp.1-5 |
| EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] | 2012-01-26 15:15 |
Osaka | Osaka Univ. Convention Center | AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure for 25.8Gbps direct modulation Yohei Hokama, Go Sakaino, Toru Takiguchi, Takashi Nagira, Harunaka Yamaguchi, Masato Suzuki, Eitaro Ishimura, Atsushi Sugitatsu, Teruyuki Shimura (Mitsubishi Electric) PN2011-47 OPE2011-163 LQE2011-149 EST2011-97 MWP2011-65 |
We developed 1.3μm AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure. In this work, we got enough power and larg... [more] | PN2011-47 OPE2011-163 LQE2011-149 EST2011-97 MWP2011-65 pp.95-98 |
| OCS, LQE, OPE | 2011-10-27 14:50 |
Kochi | Kochi University of Technology | 43Gbps SOA-MZI Wavelength Converter Monolithically Integrated with Monitor PD for Wide Dynamic Range Operation Nobuo Ohata, Takeshi Yamatoya, Takeshi Saito, Yoshimichi Morita, Eitaro Ishimura, Hiroshi Aruga (Mitsubishi Electric Corp./PETRA) OCS2011-67 OPE2011-105 LQE2011-68 |
We developed a 43 Gbps SOA-MZI wavelength converter integrated with monitor PD and SOA for adjusting input signal power.... [more] | OCS2011-67 OPE2011-105 LQE2011-68 pp.73-76 |
| LQE, OPE | 2011-06-30 16:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Development of an AlInAs Avalanche Photodiode for 10G-EPON Yoshifumi Sasahata, Masaharu Nakaji, Susumu Ihara, Kazuki Yamaji, Matobu Kikuchi, Daisuke Suzuki, Hitoshi Sakuma, Yasuhiro Kunitsugu, Eitaro Ishimura, Atsushi Sugitatsu (Mitsubishi Electric Co.) OPE2011-27 LQE2011-27 |
We developed a surface illuminated AlInAs Avalanche Photodiode ( APD ) for 10G - EPON ONU. We optimized a distributed br... [more] | OPE2011-27 LQE2011-27 pp.65-69 |
| PN | 2011-03-01 16:00 |
Kagoshima | KKR Kagoshima Keitenkaku | Cascadable all-optical XOR gate using SOA-MZI wavelength converter Iori Takamatsu, Akihiro Maruta (Osaka Univ.), Nobuo Ohata, Hiroshi Aruga, Eitaro Ishimura, Atsushi Sugitatsu (Mitsubishi Electric Corp.), Ken-ichi Kitayama (Osaka Univ.) PN2010-79 |
(To be available after the conference date) [more] | PN2010-79 pp.113-116 |
| OPE, EMT, LQE, PN, IEE-EMT [detail] | 2011-01-28 09:00 |
Osaka | Osaka Univ. | 1.3um 25/40Gb/s EAM integrated DFB-LD Takeshi Yamatoya, Takeshi Saito, Yoshimichi Morita, Eitaro Ishimura, Chikara Watatani, Akihiro Shima (Mitsubishi Electric Corp.) PN2010-40 OPE2010-153 LQE2010-138 |
[more] | PN2010-40 OPE2010-153 LQE2010-138 pp.85-88 |
| LQE | 2010-12-17 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3μm 25.8Gbps direct modulation of BH AlGaInAs DFB lasers for low driving current Go Sakaino, Toru Takiguchi, Yohei Hokama, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa, Eitaro Ishimura, Akihiro Shima (Mitsubishi Electric Corp. HOW) LQE2010-119 |
1.3µm-band BH AlGaInAs short cavity DFB lasers are fabricated with p-InP substrate for 100GbE (25Gbps x 4 waveleng... [more] | LQE2010-119 pp.23-26 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 16:00 |
Kyoto | 1.3μm-25/43Gbps EML with tensile-strained asymmetric QW absorption layer Takeshi Saito, Takeshi Yamatoya, Yoshimichi Morita, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2009-44 OPE2009-182 LQE2009-164 |
We demonstrate 1.3µm-25 / 43Gbps EML with novel tensile-strained asymmetric quantum well absorption layer. Clear ey... [more] | PN2009-44 OPE2009-182 LQE2009-164 pp.53-56 |
|
| OPE, LQE, OCS | 2009-10-23 16:55 |
Fukuoka | High-power RF InGaAs/InP p-i-n PD Shigetaka Itakura, Kiyohide Sakai, Eitaro Ishimura, Masaharu Nakaji, Toshitaka Aoyagi, Yoshihito Hirano (Mitsubishi Electric Corp.) OCS2009-80 OPE2009-146 LQE2009-105 |
We proposed a high-power RF InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region for RF photonic links, an... [more] | OCS2009-80 OPE2009-146 LQE2009-105 pp.191-195 |
|
| OPE, EMT, MW | 2009-07-30 13:25 |
Hokkaido | Asahikawa Civic Culture Hall | High efficiency dual-resonant-cavity InGaAs pin-PD for radio-over-fiber application Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Shigetaka Itakura, Kiyohide Sakai, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) MW2009-35 OPE2009-35 |
For radio-over-fiber applications, we have developed a high-efficient InGaAs pin PD with a dual resonant cavity, which r... [more] | MW2009-35 OPE2009-35 pp.31-34 |
| IA | 2009-01-28 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Wide Dynamic Range Wavelength Converter Atsushi Sugitatsu, Toshiharu Miyahara, Nobuo Ohata, Eitaro Ishimura, Takeshi Saito, Takeshi Yamatoya, Toshitaka Aoyagi (Mitsubishi/OITDA), Yasuhiko Arakawa (Univ. of Tokyo) IA2008-55 |
We develop the wide dynamic range wavelength converter, which is a part of the project "Development of Next-generation H... [more] | IA2008-55 pp.45-47 |
| OCS, LQE, OPE | 2008-10-23 09:25 |
Fukuoka | Kyushu Univ. | High-current InGaAs pin-PD for Microwave output Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric corp. High Frequency & Optical Device Works) OCS2008-48 OPE2008-91 LQE2008-60 |
For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP la... [more] | OCS2008-48 OPE2008-91 LQE2008-60 pp.7-10 |
| LQE, CPM, EMD, OPE | 2008-08-29 10:55 |
Miyagi | Touhoku Univ. | The guardring-free InAlAs Avalanche Photodiodes for optical communication Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 |
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] | EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 pp.89-92 |
| LQE, OPE, OCS | 2007-11-01 10:50 |
Fukuoka | Highly reliable guardring-free planar InAlAs avalanche photodiode Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84 |
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] | OCS2007-43 OPE2007-98 LQE2007-84 pp.19-22 |
|
| OPE, EMT, LQE, PN | 2007-01-29 13:50 |
Osaka | Osaka Univ. Convention Center | Waveguide photodiode for 40Gbps optical comunication Masaharu Nakaji, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2006-55 OPE2006-137 LQE2006-126 |
[more] | PN2006-55 OPE2006-137 LQE2006-126 pp.45-48 |
[Return to Top Page]