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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 6件中 1~6件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2020-01-31
Tokyo Kikai-Shinko-Kaikan Bldg. GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding
Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric)
LQE 2018-02-23
Kanagawa   [Invited Talk] Development of AlInAs APD in Optical Communications System -- Guardring-free Planar AlInAs APD --
Eiji Yagyu (Mitsubishi Electric) LQE2017-153
AlInAs APDs have superior performance than InP APDs in principle. We make an AlInAs avalanche photodiode (APD) practicab... [more] LQE2017-153
(Joint) [detail]
Tokyo   An MMI-based Polarization Splitter Using Patterned Metal and Angled Joint
Keisuke Kojima (MERL), Satoshi Nishikawa, Eiji Yagyu (Mitsubishi), Wangqing Yuan, Bingnan Wang, Toshiaki Koike-Akino, Kieran Parsons (MERL) OCS2012-106 OFT2012-82 OPE2012-200
We have proposed a polarization beam splitter consisting of MMI with angled joint and metal layer made on an InP substra... [more] OCS2012-106 OFT2012-82 OPE2012-200
pp.51-55(OCS), pp.71-75(OFT), pp.71-75(OPE)
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132
 [more] ED2009-153 CPM2009-127 LQE2009-132
LQE, CPM, EMD, OPE 2008-08-29
Miyagi Touhoku Univ. The guardring-free InAlAs Avalanche Photodiodes for optical communication
Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48
LQE, OPE, OCS 2007-11-01
Fukuoka   Highly reliable guardring-free planar InAlAs avalanche photodiode
Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] OCS2007-43 OPE2007-98 LQE2007-84
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