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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 6件中 1~6件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2020-01-31
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding
Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric)
 [more]
LQE 2018-02-23
12:45
Kanagawa   [Invited Talk] Development of AlInAs APD in Optical Communications System -- Guardring-free Planar AlInAs APD --
Eiji Yagyu (Mitsubishi Electric) LQE2017-153
AlInAs APDs have superior performance than InP APDs in principle. We make an AlInAs avalanche photodiode (APD) practicab... [more] LQE2017-153
pp.11-14
OFT, OPE, OCS
(Joint) [detail]
2013-03-01
10:50
Tokyo   An MMI-based Polarization Splitter Using Patterned Metal and Angled Joint
Keisuke Kojima (MERL), Satoshi Nishikawa, Eiji Yagyu (Mitsubishi), Wangqing Yuan, Bingnan Wang, Toshiaki Koike-Akino, Kieran Parsons (MERL) OCS2012-106 OFT2012-82 OPE2012-200
We have proposed a polarization beam splitter consisting of MMI with angled joint and metal layer made on an InP substra... [more] OCS2012-106 OFT2012-82 OPE2012-200
pp.51-55(OCS), pp.71-75(OFT), pp.71-75(OPE)
ED, LQE, CPM 2009-11-20
13:10
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132
 [more] ED2009-153 CPM2009-127 LQE2009-132
pp.119-123
LQE, CPM, EMD, OPE 2008-08-29
10:55
Miyagi Touhoku Univ. The guardring-free InAlAs Avalanche Photodiodes for optical communication
Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48
pp.89-92
LQE, OPE, OCS 2007-11-01
10:50
Fukuoka   Highly reliable guardring-free planar InAlAs avalanche photodiode
Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] OCS2007-43 OPE2007-98 LQE2007-84
pp.19-22
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