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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
OPE, OCS, LQE |
2020-10-23 11:35 |
Online |
Online |
Demonstration on Low Power Consumption Operation of Hybrid Pumped Multi-core Erbium Doped Fiber Amplifier Keiichi Matsumoto, Toshifumi Nakamura, Hidemi Noguchi, Emmanuel Le Taillandier de Gabory (NEC) OCS2020-13 OPE2020-36 LQE2020-16 |
Optical transmission using MCF has not only been expected to push the limit of capacity but reduce power consumption of ... [more] |
OCS2020-13 OPE2020-36 LQE2020-16 pp.26-31 |
PRMU, CNR |
2017-02-18 16:00 |
Hokkaido |
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[Special Talk]
Hironobu Fujiyoshi (Chubu Univ.), Eiichi Matsumoto (PFN), Kei Okada (UTokyo) PRMU2016-174 CNR2016-41 |
[more] |
PRMU2016-174 CNR2016-41 pp.123-129 |
OPE, LQE |
2016-06-17 13:15 |
Tokyo |
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Fabrication of GaInAsP laser using directly bonded InP/Si Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22 |
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] |
OPE2016-12 LQE2016-22 pp.15-20 |
LQE, OPE |
2015-06-19 13:25 |
Tokyo |
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Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2015-13 LQE2015-23 |
Thin film InP layers have been bonded on Si substrate and Quarts substrate using wafer direct bonding technique and inte... [more] |
OPE2015-13 LQE2015-23 pp.15-20 |
OPE, LQE |
2014-06-20 14:00 |
Tokyo |
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Electro-luminescence obtained from QDs LED grown on wafer bonded InP/Si substrate Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2014-15 LQE2014-20 |
We have demonstrated (Ga)InAs/InP QD arrayed waveguide LED on directly bonded InP/Si substrate. Electroluminescence sign... [more] |
OPE2014-15 LQE2014-20 pp.15-18 |
LQE, OPE |
2013-06-21 11:25 |
Tokyo |
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MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya, Kazuhiko Shimomura (Sophia Univ.) OPE2013-9 LQE2013-19 |
Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we... [more] |
OPE2013-9 LQE2013-19 pp.13-18 |
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