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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
14:50		 Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)		 [Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping
Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura, Reika Ichihara, Kazuhiro Matsuo, Daisuke Hagishima, Makoto Fujiwara, Masumi Saitoh (KIOXIA) SDM2023-78		  [more] SDM2023-78
pp.17-19
SDM 2013-11-15
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors
Chika Tanaka, Daisuke Hagishima (Toshiba), Ken Uchida (Keio Univ.), Toshinori Numata (Toshiba) SDM2013-106		  [more] SDM2013-106
pp.37-42
CAS
(2nd)		 2010-10-06
09:45		 Chiba Makuhari Messe [Invited Talk] Impact of DFR simulation from device to circuit
Kazuya Matsuzawa, Daisuke Hagishima, Takamitsu Ishihara (Advanced LSI Technology Lab. TOSHIBA) 		Long term-reliability must be considered in the value of LSI as well as function and performance. Conventionally, the LS... [more]
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