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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED |
2009-06-25 09:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
MOS Transistors fabricated on Si(551) surface based on radical reaction processes Akinobu Teramoto, Weitao Cheng, Chingfoa Tye, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2009-84 SDM2009-79 |
Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is larg... [more] |
ED2009-84 SDM2009-79 pp.149-152 |
SDM |
2007-10-05 13:35 |
Miyagi |
Tohoku Univ. |
High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, Chingfoa Tye, Syunichi Watabe, Tomoyuki Suwa, Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-187 |
[more] |
SDM2007-187 pp.45-48 |
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