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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2011-07-29
14:45		 Niigata Multimedia system center, Nagaoka Univ. of Tech. Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) ED2011-40		  [more] ED2011-40
pp.17-20
CPM, LQE, ED 2010-11-12
10:00		 Osaka   Characterization of insulated gates on GaN and AlGaN/GaN structures
Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) ED2010-154 CPM2010-120 LQE2010-110		 We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures us... [more] ED2010-154 CPM2010-120 LQE2010-110
pp.55-58
ED 2010-06-17
16:15		 Ishikawa JAIST Understanding of C-V characteristics in AlGaN/GaN MIS structure
Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST) ED2010-40		  [more] ED2010-40
pp.37-40
ED, MW 2010-01-14
13:40		 Tokyo Kikai-Shinko-Kaikan Bldg Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures
Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-185 MW2009-168		  [more] ED2009-185 MW2009-168
pp.61-64
SDM, ED 2009-06-25
11:00		 Overseas Haeundae Grand Hotel, Busan, Korea Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition
Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-74 SDM2009-69		  [more] ED2009-74 SDM2009-69
pp.109-112
ED 2009-06-11
16:00		 Tokyo   Characterization of ALD-Al2O3/AlGaN/GaN interfaces
Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-41		  [more] ED2009-41
pp.27-30
CPM, ED, LQE 2007-10-11
17:35		 Fukui Fukui Univ. UV-response characteristics of insulator/n-GaN MIS structures for sensor application
Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65		 For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] ED2007-164 CPM2007-90 LQE2007-65
pp.43-46
ED, CPM, LQE 2006-10-05
15:20		 Kyoto   Interface control for GaN-based electron devices
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University) 		 [more] ED2006-157 CPM2006-94 LQE2006-61
pp.29-34
 Results 1 - 8 of 8  /   
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